Abstract: A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.

Abstract: A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

Abstract: A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

Abstract: The dicing method comprises the steps of providing a substrate (1) of semiconductor material, the substrate having a main surface (10), where integrated components (3) of chips (13) are arranged, and a rear surface (11) opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches (20) penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15?) of the cavity is provided to expose the cavity to the environment.

Abstract: A trench (20) is introduced into a carrier (10) for electrical components (30) on a first surface (O10a) of the carrier into the material of the carrier (10). The carrier (10) is cut through by a cut (60) being introduced into the material of the carrier from a second surface (O10b) of the carrier (10), said second surface being situated opposite the first surface. The cut is implemented in such a way that the cut (60) runs through the trench (20) on the first surface (O10a) of the carrier. By providing a trench (20) in the material layers of the carrier (10) which are near the surface, it is possible to prevent material from breaking out of the carrier during the singulation of devices (1, 2).

Abstract: A semiconductor substrate (1) is provided with integrated circuits. Dicing trenches (7) are formed in the substrate (1) between the integrated circuits, a polyimide layer (8) spanning the trenches (7) is applied above the integrated circuits, a tape layer (14) is applied above the polyimide layer (8), and a layer portion of the substrate (1) is removed from the substrate side (17) opposite the tape layer (14), until the trenches (7) are opened and dicing of the substrate (1) is thus effected. The polyimide layer (8) is severed in sections (18) above the trenches (7) when the tape layer (14) is removed. The semiconductor chip is provided with a cover layer (11) laterally confining the polyimide layer (8) near the trenches (7), in particular for forming breaking delimitations (9).

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Abstract: A semiconductor substrate (1) is provided with integrated circuits. Dicing trenches (7) are formed in the substrate (1) between the integrated circuits, a polyimide layer (8) spanning the trenches (7) is applied above the integrated circuits, a tape layer (14) is applied above the polyimide layer (8), and a layer portion of the substrate (1) is removed from the substrate side (17) opposite the tape layer (14), until the trenches (7) are opened and dicing of the substrate (1) is thus effected. The polyimide layer (8) is severed in sections (18) above the trenches (7) when the tape layer (14) is removed. The semiconductor chip is provided with a cover layer (11) laterally confining the polyimide layer (8) near the trenches (7), in particular for forming breaking delimitations (9).

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15?) of the cavity is provided to expose the cavity to the environment.

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Abstract: The dicing method comprises the steps of providing a substrate (1) of semiconductor material, the substrate having a main surface (10), where integrated components (3) of chips (13) are arranged, and a rear surface (11) opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches (20) penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.

Abstract: A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Abstract: A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Abstract: A trench (20) is introduced into a carrier (10) for electrical components (30) on a first surface (O10a) of the carrier into the material of the carrier (10). The carrier (10) is cut through by a cut (60) being introduced into the material of the carrier from a second surface (O10b) of the carrier (10), said second surface being situated opposite the first surface. The cut is implemented in such a way that the cut (60) runs through the trench (20) on the first surface (O10a) of the carrier. By providing a trench (20) in the material layers of the carrier (10) which are near the surface, it is possible to prevent material from breaking out of the carrier during the singulation of devices (1, 2).