Abstract: A system for vapor phase deposition wherein a wafer is heated inside a reaction space and exposed to a gas flow in which the coating substance is contained in the form of an organometallic compound, and is deposited as a monocrystalline layer, by way of gas reactions, on to the wafer. On order to increase productivity, a holder supporting a stack of wafers is moved from a loading station into a reaction region and, with the aid of a stepping motor driving mechanism, is successively transferred through the reaction region, and finally placed into an unloading station. During the loading and the unloading of the holders supporting the wafers, the reaction region is prevented from being contaminated by the atmosphere. A transfer system for the wafers includes driving mechanisms which allow transfer of wafers through the reaction region in either of two opposing directions.

Abstract: An upper crucible part comprises several chambers containing a supersaturated growth solution with which a semiconductor wafer is coated with a monocrystalline semiconductor layer by way of epitaxial growth. The semiconductor wafer is contained in a cassette-shaped lower part which is moved underneath the upper part. The coating itself is effected within a protective-gas atmosphere within a reaction space which, by a diffusion furnace, is heated up to a temperature which is very exactly adhered to.