Patents by Inventor Bhanu Vankayalapati

Bhanu Vankayalapati has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products
    Patent number: 11525740
    Abstract: A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: December 13, 2022
    Assignee: Boards of Regents, The University of Texas System
    Inventors: Bilal Akin, Fei Yang, Shi Pu, Chi Xu, Bhanu Vankayalapati
  • METHODS OF MEASURING REAL-TIME JUNCTION TEMPERATURE IN SILICON CARBIDE POWER MOSFET DEVICES USING TURN-ON DELAY, RELATED CIRCUITS, AND COMPUTER PROGRAM PRODUCTS
    Publication number: 20210396596
    Abstract: A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 23, 2021
    Inventors: Bilal Akin, Fei Yang, Shi Pu, Chi Xu, Bhanu Vankayalapati