Patents by Inventor Bharatjeet Singh GILL

Bharatjeet Singh GILL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170117857
    Abstract: Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.
    Type: Application
    Filed: October 21, 2016
    Publication date: April 27, 2017
    Inventors: Michael Joseph McPartlin, Bharatjeet Singh Gill
  • Publication number: 20170117204
    Abstract: Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.
    Type: Application
    Filed: October 21, 2016
    Publication date: April 27, 2017
    Inventors: Michael Joseph McPartlin, Bharatjeet Singh Gill
  • Patent number: 9407215
    Abstract: Disclosed are circuits and methods related to low-noise amplifiers (LNAs) having improved linearity. In some embodiments, a radio-frequency (RF) amplifier circuit can include a first amplifying transistor configured to amplify an RF signal. The RF amplifier circuit can further include a switchable inductance circuit that couples the first amplifying transistor to a signal ground. The switchable inductance circuit can be configured to be capable of providing at least two different inductance values that yield different linearity levels for the RF amplifier circuit. A high linearity performance can be obtained with a higher inductance and a lower bias voltage, thereby reducing power consumption of the RF amplifier. Examples of methods and devices related to such an RF amplifier circuit are disclosed.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: August 2, 2016
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventor: Bharatjeet Singh Gill
  • Publication number: 20140333384
    Abstract: Disclosed are circuits and methods related to low-noise amplifiers (LNAs) having improved linearity. In some embodiments, a radio-frequency (RF) amplifier circuit can include a first amplifying transistor configured to amplify an RF signal. The RF amplifier circuit can further include a switchable inductance circuit that couples the first amplifying transistor to a signal ground. The switchable inductance circuit can be configured to be capable of providing at least two different inductance values that yield different linearity levels for the RF amplifier circuit. A high linearity performance can be obtained with a higher inductance and a lower bias voltage, thereby reducing power consumption of the RF amplifier. Examples of methods and devices related to such an RF amplifier circuit are disclosed.
    Type: Application
    Filed: May 9, 2014
    Publication date: November 13, 2014
    Inventor: Bharatjeet Singh GILL