Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: An article comprises a plasma resistant ceramic material comprising 40-60 mol % of Y2O3, 35-50 mol % of ZrO2, and 10-20 mol % of Al2O3.

Abstract: An article comprises a plasma resistant ceramic material comprising 80-90 mol % of Y2O3, over 0 mol % to 20 mol % of ZrO2, and 10-20 mol % of Al2O3.

Abstract: A plasma resistant ceramic article comprises a plasma resistant ceramic material comprising 60-80 mol % of Y2O3, above 0 mol % to 9 mol % of ZrO2, and 20-40 mol % of Al2O3.

Abstract: An article comprises a plasma resistant ceramic material comprising 40 mol % to less than 100 mol % of Y2O3, above 0 mol % to 60 mol % of ZrO2, and above 0 mol % to 5 mol % of Al2O3.

Abstract: A chamber component comprises a body, a first protective layer and a conformal second protective layer over the first protective layer. The first protective layer comprises a plasma resistant ceramic, has a thickness of greater than approximately 50 microns and comprises a plurality of cracks and pores. The conformal second protective layer comprises a plasma resistant rare earth oxide, has a thickness of less than 50 microns, has a porosity of less than 1%, and seals the plurality of cracks and pores of the first protective layer.

Abstract: A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of 10 micro-inches or less.

Abstract: A method of manufacturing an article comprises providing an article such as a chamber component for an etch reactor. A plasma spray deposition process is performed for deposit a first protective layer over at least one surface of the chamber component. The first protective layer is a plasma resistant ceramic having a thickness of greater than approximately 50 microns and a plurality of cracks and pores. An ion assisted deposition (IAD) process is then performed to deposit a second protective layer over the first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals the plurality of cracks and pores of the first protective layer.

Abstract: An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y2O3 in a range between about 45 mol % to about 99 mol %, ZrO2 in a range between about 0 mol % to about 55 mol %, and Al2O3 in range between about 0 mol % to about 10 mol %. The ceramic coating may alternatively inculde Y2O3 in a range between about 30 mol % to about 60 mol %, ZrO2 in a range between about 0 mol % to about 20 mol %, and Al2O3 in a range between about 30 mol % to about 60 mol %.

Abstract: An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12 and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 ?m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

Abstract: A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body. The protective layer has a first thickness of less than 300 ?m on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.

Abstract: A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. A plasma spray thin film, plasma spray chemical vapor deposition or plasma spray physical vapor deposition process is then performed by the low pressure plasma spraying system to deposit a second plasma resistant layer on the first plasma resistant layer, the second plasma resistant layer having a thickness of less than 50 microns and a porosity of less than 1%.

Abstract: A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of less than 6 micro-inches.

Abstract: A chamber component for a processing chamber comprises a metallic article that comprises impurities. The chamber component further comprises a first anodization layer on the metallic article, the first anodization layer having a thickness greater than about 100 nm. The first anodization layer comprises a dense barrier layer portion and a porous columnar layer portion over the dense barrier layer portion, wherein the porous columnar layer portion comprises a plurality of pores that are free from moisture. The chamber component further comprises an aluminum coating on the first anodization layer, the aluminum coating being substantially free from impurities.

Abstract: A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of 10 micro-inches or less.

Abstract: A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 ?m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

Abstract: To manufacture a chamber component for a processing chamber a first anodization layer is formed on a metallic article with impurities, the first anodization layer having a thickness greater than about 100 nm, and an aluminum coating is formed on the first anodization layer, the aluminum coating being substantially free from impurities. A second anodization layer can be formed on the aluminum coating.

Abstract: A solid sintered ceramic article may include Y2O3 at a concentration of approximately 40 molar % to approximately 60 molar % and Er2O3 at a concentration of approximately 400 molar % to approximately 60 molar %. An article may include a body and a plasma resistant ceramic coating on at least one surface of the body. The plasma resistant ceramic coating comprising Y2O3 at a concentration of approximately 30 molar % to approximately 60 molar %, Er2O3 at a concentration of approximately 20 molar % to approximately 60 molar %, and at least one of ZrO2, Gd2O3 or SiO2 at a concentration of over 0 molar % to approximately 30 molar %.