Abstract: Technologies for a high-voltage transmission gate are disclosed. In the illustrative embodiment, a companion chip is connected to a quantum processor. The companion chip provides voltages to gates of qubits on the quantum processor. The companion chip includes one or more high-voltage transmission gates that can be used to charge capacitors linked to gates of qubits on the quantum processor. The transmission gate includes transistors with a breakdown voltage less than a range of input and output voltages of the transmission gate. Control circuitry on the companion chip controls the voltages applied to transistors of the transmission gate to ensure that the voltage differences across the terminals of each transistor is below a breakdown voltage.

Abstract: Technologies for scalable spin qubit readout are disclosed. In the illustrative embodiment, superconducting and semiconducting components are integrated onto a single chip, allowing for frequency and temporal multiplexing components to be integrated onto the same die. The semiconducting components on the die can include transistors, varactors, and amplifiers, and the superconducting components can include an inductor and a capacitor that form part of an impedance matching network.