Patents by Inventor Biswanath Roy

Biswanath Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabrication
    Patent number: 6734036
    Abstract: The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: May 11, 2004
    Assignee: Agere Systems Inc.
    Inventors: Utpal Kumar Chakrabarti, Bora M Onat, Kevin Cyrus Robinson, Biswanath Roy, Ping Wu
  • Semiconductor device and method of fabrication
    Publication number: 20030001241
    Abstract: The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
    Type: Application
    Filed: May 28, 2002
    Publication date: January 2, 2003
    Applicant: Agere Systems Guardian Corp.
    Inventors: Utpal Kumar Chakrabarti, Bora M. Onat, Kevin Cyrus Robinson, Biswanath Roy, Ping Wu
  • Semiconductor devices which utilize low K dielectrics
    Patent number: 6437425
    Abstract: The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: August 20, 2002
    Assignee: Agere Systems Guardian Corp
    Inventors: Utpal Kumar Chakrabarti, Bora M Onat, Kevin Cyrus Robinson, Biswanath Roy, Ping Wu