Abstract: Described herein are embedded dynamic random-access memory (eDRAM) memory cells and arrays, as well as corresponding methods and devices. An exemplary eDRAM memory array implements a memory cell that uses a thin-film transistor (TFT) as a selector transistor. One source/drain (S/D) electrode of the TFT is coupled to a capacitor for storing a memory state of the cell, while the other S/D electrode is coupled to a bitline. The bitline may be a shallow bitline in that a thickness of the bitline may be smaller than a thickness of one or more metal interconnects provided in the same metal layer as the bitline but used for providing electrical connectivity for components outside of the memory array. Such a bitline may be formed in a separate process than said one or more metal interconnects. In an embodiment, the memory cells may be formed in a back end of line process.

Abstract: Described herein are embedded dynamic random-access memory (eDRAM) memory cells and arrays, as well as corresponding methods and devices. An exemplary eDRAM memory array implements a memory cell that uses a thin-film transistor (TFT) as a selector transistor. One source/drain (S/D) electrode of the TFT is coupled to a capacitor for storing a memory state of the cell, while the other S/D electrode is coupled to a bitline. The bitline may be a shallow bitline in that a thickness of the bitline may be smaller than a thickness of one or more metal interconnects provided in the same metal layer as the bitline but used for providing electrical connectivity for components outside of the memory array. Such a bitline may be formed in a separate process than said one or more metal interconnects. In an embodiment, the memory cells may be formed in a back end of line process.

Abstract: Described herein are embedded dynamic random-access memory (eDRAM) memory cells and arrays, as well as corresponding methods and devices. An exemplary eDRAM memory array implements a memory cell that uses a thin-film transistor (TFT) as a selector transistor. One source/drain (S/D) electrode of the TFT is coupled to a capacitor for storing a memory state of the cell, while the other S/D electrode is coupled to a bitline. The bitline may be a shallow bitline in that a thickness of the bitline may be smaller than a thickness of one or more metal interconnects provided in the same metal layer as the bitline but used for providing electrical connectivity for components outside of the memory array. Such a bitline may be formed in a separate process than said one or more metal interconnects. In an embodiment, the memory cells may be formed in a back end of line process.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: Integrated circuit structures having differentiated interconnect lines in a same dielectric layer, and methods of fabricating integrated circuit structures having differentiated interconnect lines in a same dielectric layer, are described. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A plurality of conductive interconnect lines is in the ILD layer. The plurality of conductive interconnect lines includes a first interconnect line having a first height, and a second interconnect line immediately laterally adjacent to but spaced apart from the first interconnect line, the second interconnect line having a second height less than the first height.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: Described herein are embedded dynamic random-access memory (eDRAM) memory cells and arrays, as well as corresponding methods and devices. An exemplary eDRAM memory array implements a memory cell that uses a thin-film transistor (TFT) as a selector transistor. One source/drain (S/D) electrode of the TFT is coupled to a capacitor for storing a memory state of the cell, while the other S/D electrode is coupled to a bitline. The bitline may be a shallow bitline in that a thickness of the bitline may be smaller than a thickness of one or more metal interconnects provided in the same metal layer as the bitline but used for providing electrical connectivity for components outside of the memory array. Such a bitline may be formed in a separate process than said one or more metal interconnects. In an embodiment, the memory cells may be formed in a back end of line process.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: An integrated circuit includes a base, a first transistor structure on or above the base, and a second transistor structure on or above the base, where the second transistor structure is spaced from the first transistor structure. An insulator material at least partially encapsulates an airgap or other gas pocket laterally between the first transistor structure and the second transistor structure. The gas pocket is at least 5 nm in height and at least 5 nm wide according to an embodiment, and in some cases is as tall or taller than active device layers of the transistor structures it separates.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: Apparatuses for improving resistive memory energy efficiency are provided. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: Described is an apparatus for improving read and write margins. The apparatus comprises: a sourceline; a first bitline; a column of resistive memory cells, each resistive memory cell of the column coupled at one end to the sourceline and coupled to the first bitline at another end; and a second bitline in parallel to the first bitline, the second bitline to decouple read and write operations on the bitline for the resistive memory cell. Described is also an apparatus which comprises: a sourceline; a bitline; a column of resistive memory cells, each resistive memory cell in the column coupled at one end to the sourceline and coupled to the bitline at another end; and sourceline write drivers coupled to the bitline and the sourceline, wherein the sourceline write drivers are distributed along the column of resistive memory cells.

Abstract: Described is an apparatus for improving read and write margins. The apparatus comprises: a sourceline; a first bitline; a column of resistive memory cells, each resistive memory cell of the column coupled at one end to the sourceline and coupled to the first bitline at another end; and a second bitline in parallel to the first bitline, the second bitline to decouple read and write operations on the bitline for the resistive memory cell. Described is also an apparatus which comprises: a sourceline; a bitline; a column of resistive memory cells, each resistive memory cell in the column coupled at one end to the sourceline and coupled to the bitline at another end; and sourceline write drivers coupled to the bitline and the sourceline, wherein the sourceline write drivers are distributed along the column of resistive memory cells.

Abstract: Described is an apparatus for improving read and write margins. The apparatus comprises: a sourceline; a first bitline; a column of resistive memory cells, each resistive memory cell of the column coupled at one end to the sourceline and coupled to the first bitline at another end; and a second bitline in parallel to the first bitline, the second bitline to decouple read and write operations on the bitline for the resistive memory cell. Described is also an apparatus which comprises: a sourceline; a bitline; a column of resistive memory cells, each resistive memory cell in the column coupled at one end to the sourceline and coupled to the bitline at another end; and sourceline write drivers coupled to the bitline and the sourceline, wherein the sourceline write drivers are distributed along the column of resistive memory cells.

Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

Abstract: Described is an apparatus for improving read and write margins. The apparatus comprises: a sourceline; a first bitline; a column of resistive memory cells, each resistive memory cell of the column coupled at one end to the sourceline and coupled to the first bitline at another end; and a second bitline in parallel to the first bitline, the second bitline to decouple read and write operations on the bitline for the resistive memory cell. Described is also an apparatus which comprises: a sourceline; a bitline; a column of resistive memory cells, each resistive memory cell in the column coupled at one end to the sourceline and coupled to the bitline at another end; and sourceline write drivers coupled to the bitline and the sourceline, wherein the sourceline write drivers are distributed along the column of resistive memory cells.