Abstract: Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

Abstract: Embodiments of this disclosure provide a communication method and device, a storage medium, and a program product. According to the communication method of this disclosure, a physical layer protocol data unit (PPDU) is transmitted or received based on a tone plan of a first bandwidth. The tone plan includes a physical resource unit (PRU), and the PRU includes discrete subcarriers. According to embodiments of this disclosure, an original nominal RU is processed to obtain a PRU including discrete subcarriers. Discretized subcarriers of the PRU may be evenly distributed on a larger bandwidth without changing subcarrier division of the original nominal RU. When it is ensured that a large PAPR is not generated in data transmission due to discrete subcarriers, a transmit end can perform communication at a high transmit power.

Abstract: Technologies for a flexible three-dimensional power plane in a chassis are disclosed. In one embodiment, a flexible ribbon cable is laid along a circuit board tray. The flexible ribbon cable is secured to the tray using power bosses. The power bosses connect to one or more conductors on the ribbon cable. When the circuit board is mounted on the circuit board tray, the power bosses extend through holes in the circuit board and mate with power clips on the surface of the circuit board tray. The ribbon cable, power bosses, and power clips can distribute power to various locations on the circuit board, without requiring large traces that take up space on the circuit board.

Abstract: The photovoltaic module includes multiple cell sheets arranged in an array including multiple rows and multiple columns. Each of the multiple rows of cell sheets is arranged at intervals along a first direction, each of the multiple columns of cell sheets is arranged at intervals along a second direction. The photovoltaic module includes multiple support plates arranged at intervals, where each of the multiple support plates extends along a direction in which each of the multiple rows or multiple columns of cell sheets is arranged, and each of the multiple support plates is arranged on the second surface of each of the multiple rows or the multiple columns of cell sheets. The photovoltaic module further includes a first flexible cover layer arranged on a side of the first surface of each of the multiple cell sheets and a second flexible cover layer arranged on each of the multiple support plates.

Abstract: A method includes: A station receives a trigger frame from an access point. The trigger frame is used to trigger the station to perform EHT TB PPDU transmission, the trigger frame further indicates a resource unit allocated to the station, and the trigger frame includes first indication information indicating that the station can perform EHT TB PPDU transmission on a portion of the allocated resource unit. The station sends an EHT TB PPDU based on an indication of the first indication information.

Abstract: A method comprises: a second communication apparatus sends a trigger frame, to trigger at least one first communication apparatus that includes a first communication apparatus to transmit an uplink PPDU. After receiving the trigger frame, the at least one first communication apparatus sends the PPDU to the second communication apparatus based on the trigger frame. The PPDU includes a data field and an STF sequence, the data field is carried in a distributed RU, the distributed RU includes a plurality of subcarrier groups that are discrete in frequency domain, one of the subcarrier groups includes one subcarrier or includes at least two consecutive subcarriers, the STF sequence is carried on all subcarriers of a plurality of consecutive RUs, the plurality of consecutive RUs are consecutive RUs corresponding to the distributed RU, and each of the consecutive RUs includes a plurality of subcarriers that are consecutive in frequency domain.

Abstract: The present disclosure relates to a spike event decision-making device, method, chip, and electronic device to eliminate inherent delays of an output spike event of the neuromorphic chip when reading decisions. The spike event decision-making device includes a first counting module configured to count a number of input spike events of the spiking neural network, a second counting module configured to count some or all of the output spike events of the spiking neural network; and a decision-making module configured to generate a decision-making result according to numbers of spike events fired by neurons in an output layer of the spiking neural network when the number counted by the first counting module reaches a first predetermined value, or when the total count counted by the second counting module reaches a second predetermined value.

Abstract: The present disclosure relates to communication methods and apparatuses, and relates to the field of communication technologies. In one example method, a first communication apparatus generates a physical layer protocol data unit (PPDU), and sends the PPDU to a second communication apparatus. The PPDU includes a first field with 26 bits, and the first field includes a one-bit unsolicited modulation and coding scheme (MCS) feedback (MFB) subfield and a one-bit first indication information. When a value of the unsolicited MFB subfield is a first value, the first indication information indicates an MCS request (MRQ). When a value of the unsolicited MFB subfield is a second value, the first indication information indicates an uplink extremely high throughput trigger-based PPDU MFB (UL EHT TB PPDU MFB).

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates.

Abstract: The present disclosure provides a display panel and a display device. The display panel includes an array substrate, a bonding area of the array substrate is provided with a plurality of bonding pads and a driving chip. A first area of the driving chip is at least provided with a plurality of first dummy terminals. A height difference caused by warping of driving terminals can be compensated by the first dummy terminals, thereby avoiding a phenomenon of shallow conduction. An insulation protective layer is provided on a part of the array substrate which is corresponding to the first dummy terminals, thereby preventing metal wirings from extrusion damage.

Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Abstract: This application relates to a communication method and related apparatuses. The method includes: A first communication apparatus generates and sends a first frequency domain signal, where the first frequency domain signal includes a sub signal obtained by mapping N pieces of first frequency domain data to a first group of subcarriers and a subsignal obtained by mapping N pieces of second frequency domain data to a second group of subcarriers, and a spacing between the first group of subcarriers and the second group of subcarriers is odd-numbered subcarriers. The N pieces of first frequency domain data are obtained by multiplying data at even positions or data at odd positions in N pieces of original frequency domain data by i or —i, and the N pieces of second frequency domain data are obtained by performing reverse arrangement and/or negation on the N pieces of first frequency domain data.

Abstract: This application discloses a communication method and apparatus. The method includes: transmitting, by a second station in a second multi-link device, a first frame to a first station in a first multi-link device, where the first frame is used to request to tear down a TWT agreement for a first link, and the first link is any link in one or more links for which a TWT agreement is set up between the first multi-link device and the second multi-link device; and transmitting, by the first station, a second frame to the second station in response to the first frame. The first station may be any station, and is not limited to a station requesting to set up the TWT agreement.

Abstract: Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

Abstract: This application relates to communication methods, apparatuses, systems and computer-readable storage mediums. In an example method, a first communication apparatus generates a physical layer protocol data unit (PPDU), where the PPDU includes a short training field (STF), a long training field (LTF), and a data field. Cyclic shift is performed on at least one of the STF, the LTF, or the data field based on a cyclic shift diversity (CSD). The CSD includes L elements, and L is a maximum number of spatial streams supported by the first communication apparatus. The maximum number of spatial streams supported by the first communication apparatus is greater than 8. The example method further includes the first communication apparatus sending the PPDU to a second communication apparatus.

Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Abstract: This application provides a method for transmitting a PPDU and a communication apparatus. An AP sends a trigger frame to trigger at least one STA to transmit an uplink PPDU. After receiving the trigger frame, the at least one STA transmits respective uplink PPDUs. The uplink PPDU includes a data field and LTFs. The data field is carried on a distributed RU. The LTFs are carried on all subcarriers in a first transmission bandwidth. The first transmission bandwidth is a bandwidth occupied by a distributed RU that is allocated by the AP to the at least one STA for transmitting the uplink PPDU. Alternatively, the LTFs are carried on all subcarriers of a plurality of continuous RUs corresponding to the distributed RU.

Abstract: A cyclic shift diversity-based communication method and apparatus. A maximum number of antennas supported in this method is greater than 8. A cyclic shift is performed on a first preamble part of each antenna by using a cyclic shift diversity value, so that an automatic gain control error is reduced in response to the use of more antennas (for example, 16 antennas).

Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

Abstract: This application relates to the field of communication technologies, and provides an information transmission method and an apparatus. The information transmission method includes: A transmit device generates a PPDU of a 320 MHz bandwidth, where some or all fields of the PPDU are rotated in the 320 MHz bandwidth based on a rotation factor sequence, the 320 MHz bandwidth includes sixteen 20 MHz sub-channels, the rotation factor sequence includes 16 rotation factors, and each 20 MHz sub-channel corresponds to one rotation factor. The transmit device sends the PPDU.