Abstract: The present invention is related to a novel positive electrode active material for lithium-ion battery. The positive electrode active material is expressed by the following formula: Li1.2NixMn0.8-x-yZnyO2, wherein x and y satisfy 0<x?0.8 and 0<y?0.1. In addition, the present invention provides a method of manufacturing the positive electrode active material. The present invention further provides a lithium-ion battery which uses said positive electrode active material.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A method for preparing a three-dimensional chitosan/silver composite scaffold includes mixing an acidic aqueous chitosan solution including protonated chitosan and a deposition accelerating agent being a soluble silver salt, spacedly disposing a cathode and an anode in the resultant suspension, and applying an electric field to the cathode and the anode so that the suspension undergoes electrodeposition. The suspension has a protonated chitosan concentration ranging from 0.7 to 2.8 w/v %, and a molarity of silver ions ranging from 4 to 60 mM. The composite scaffold prepared has columnar through-holes extending in a same extension direction and each having opposite first and second openings with the latter not less in width.

Abstract: A roller type linear guideway includes: a rail, a sliding block sleeved on the rail, and end cover units installed at two ends of the sliding block. One of the end cover units includes a first cover plate, a second cover plate, an open end cover, and an outer end cover. The first cover plate includes a plurality of penetrating holes communicating with the non-load passages, the second cover plate is installed on the first cover plate and includes holes connected to the penetrating holes, and the open end cover is installed on one end of the sliding block and includes through holes communicating with the holes. The outer end cover closes the through holes to allow circulation of multiple rolling elements. The through holes, the holes, and the penetrating holes are connected to the non-load passages, so four rows of rolling elements can be filled simultaneously.

Abstract: A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: The invention relates to a method and an apparatus for generating substantially monodisperse droplets. The invention involves flowing a continuous phase fluid in a microfluidic passageway which extends along a longitudinal length direction and has a substantially constant cross section along the length direction. A dispersed phase fluid is introduced into the microfluidic passageway along a traverse direction through inlet orifices to generate droplets of the dispersed phase fluid in the continuous phase fluid. The inlet orifices have a substantially uniform diameter, and any adjacent two of the inlet orifices are arranged to be offset from each other in the length direction. The dispersed phase fluid is broken up by the shear stress generated by the continuous phase fluid to produce monodisperse droplets. By the offsetting arrangement of the inlet orifices, droplets formed by adjacent inlet orifices will not interfere with each other, thereby ensuring the uniformity of the droplets.

Abstract: A linear guide with lubrication device includes: a elongate rail; a slide module slidably mounted on the elongate rail and including a slide block and two recirculation members, which are respectively mounted to two end faces of the slide block and include a plurality of recirculation passages, in which at least one of the recirculation members includes a lubricant reservoir and a fixing through hole formed therein such that the lubricant reservoir, the recirculation passage, and the fixing through hole are in communication with each other and the lubricant reservoir receives lubricant filled therein; an application member received in the fixing through hole; a transferring member covering the application member and the transferring member absorbing and transferring lubricant to the application member. Rolling bodies, when moving through the recirculation passage, may contact the application member to have lubricant applied thereto.

Abstract: A linear guide with lubrication device includes: a elongate rail; a slide module slidably mounted on the elongate rail and including a slide block and two recirculation members, which are respectively mounted to two end faces of the slide block and include a plurality of recirculation passages, in which at least one of the recirculation members includes a lubricant reservoir and a fixing through hole formed therein such that the lubricant reservoir, the recirculation passage, and the fixing through hole are in communication with each other and the lubricant reservoir receives lubricant filled therein; an application member received in the fixing through hole; a transferring member covering the application member and the transferring member absorbing and transferring lubricant to the application member. Rolling bodies, when moving through the recirculation passage, may contact the application member to have lubricant applied thereto.

Abstract: A linear guideway with quick-release scraping plates includes: a linear guideway, two end caps, and two scraping plates. The end caps are each provided with a cantilever hook, and the scraping plates are each provided with an abutting protrusion to which the cantilever hook can be hooked, so that the assembly of the scaping plate in accordance with the present invention is very easy since it only requires the displacement of the scraping plate in one direction, and the disassembly of the scraping plate is also very convenient since it only requires the use of a rod.

Abstract: A heat dissipation module configured on a substrate having a heat producing element thereon includes a holder configured on the substrate and a heat sink having a base opposite to the heat producing element and pivotally connected to the holder and capable of joining to the substrate with the heat producing element covered by the base.

Abstract: A heat dissipation module configured on a substrate having a heat producing element thereon includes a holder configured on the substrate and a heat sink having a base opposite to the heat producing element and pivotally connected to the holder and capable of joining to the substrate with the heat producing element covered by the base.