Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.

Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.

Abstract: An electronic apparatus at least including an audio-receiving circuit is provided. The audio-receiving circuit includes an audio receiver and a processor. The audio receiver receives a sound wave from a sound source, and generates a first audio signal containing a plurality of noises to the processor. The processor performs a signal processing of time reversal to the first audio signal to restore a sound sent at an original sound source, so as to filter noises in the first audio signal and output a second audio signal.