Abstract: A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

Abstract: A display apparatus including a circuit with improved characteristics and including a thin-film transistor includes a first interlayer insulating layer arranged on a substrate, a first semiconductor layer arranged on the first interlayer insulating layer and including an oxide semiconductor material, a first gate electrode arranged on the first semiconductor layer, a second interlayer insulating layer arranged on the first gate electrode, and a first electrode layer arranged on the second interlayer insulating layer and electrically connected to the first semiconductor layer through a first contact hole penetrating the second interlayer insulating layer, wherein the first semiconductor layer includes an opening corresponding to the first contact hole, and the first electrode layer contacts an inner surface of the opening.

Abstract: A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.