Abstract: An embodiment is a method including forming an opening in a mask layer, the opening exposing a conductive feature below the mask layer, forming a conductive material in the opening using an electroless deposition process, the conductive material forming a conductive via, removing the mask layer, forming a conformal barrier layer on a top surface and sidewalls of the conductive via, forming a dielectric layer over the conformal barrier layer and the conductive via, removing the conformal barrier layer from the top surface of the conductive via, and forming a conductive line over and electrically coupled to the conductive via.

Abstract: Provided is a method of forming an interconnect structure including: forming a via; forming a first barrier layer to at least cover a top surface and a sidewall of the via; forming a first dielectric layer on the first barrier layer; performing a planarization process to remove a portion of the first dielectric layer and a portion of the first barrier layer, thereby exposing the top surface of the via; forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer has an opening exposing the top surface of the via; forming a blocking layer on the top surface of the via; forming a second barrier layer on the second dielectric layer; removing the blocking layer to expose the top surface of the via; and forming a conductive feature in the opening, wherein the conductive feature is in contact with the top surface of the via.

Abstract: An embodiment is a method including forming an opening in a mask layer, the opening exposing a conductive feature below the mask layer, forming a conductive material in the opening using an electroless deposition process, the conductive material forming a conductive via, removing the mask layer, forming a conformal barrier layer on a top surface and sidewalls of the conductive via, forming a dielectric layer over the conformal barrier layer and the conductive via, removing the conformal barrier layer from the top surface of the conductive via, and forming a conductive line over and electrically coupled to the conductive via.

Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a metallic material, wherein the first layer includes a trench; and a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: A method for forming an interconnect structure includes forming an insulating layer on a substrate. A damascene opening is formed through a thickness portion of the insulating layer. A diffusion barrier layer is formed to line the damascene opening. A conductive layer is formed overlying the diffusion barrier layer to fill the damascene opening. A carbon-containing metal oxide layer is formed on the conductive layer and the insulating layer.

Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a metallic material, wherein the first layer includes a trench; and a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: A method for semiconductor manufacturing includes receiving a device that includes a substrate and a first layer disposed over the substrate, wherein the first layer includes a trench. The method further includes applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix. The method further includes curing the first material to form a porous material layer. The porous material layer has a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed over the first layer. The first and second portions contain substantially the same percentage of each of Si, O, and C. The first and second portions contain substantially the same level of porosity.

Abstract: A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.

Abstract: A method for fabricating a semiconductor structure includes providing a substrate and a first layer over the substrate, wherein the first layer includes one or more overlay marks. The method further includes forming one or more layers on the first layer and performing a dark field (DF) inspection on the one or more overlay marks underlying the one or more layers to receive a post-film-formation data.

Abstract: A dielectric layer is formed on a substrate and patterned to form an opening. The opening is filled and the dielectric layer is covered with a metal layer. The metal layer is thereafter planarized so that the metal layer is co-planar with the top of the dielectric layer. The metal layer is etched back a predetermined thickness from the top of the dielectric layer to expose the inside sidewalls thereof. A sidewall barrier layer is formed on the sidewalls of the dielectric layer. A copper-containing layer is formed over the metal layer, the dielectric layer, and the sidewall barrier layers. The copper-containing layer is etched to form interconnect features, wherein the etching stops at the sidewall barrier layers at approximately the juncture of the sidewall of the dielectric layer and the copper-containing layer and does not etch into the underlying metal layer.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: A method for semiconductor manufacturing includes receiving a device that includes a substrate and a first layer disposed over the substrate, wherein the first layer includes a trench. The method further includes applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix. The method further includes curing the first material to form a porous material layer. The porous material layer has a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed over the first layer. The first and second portions contain substantially the same percentage of each of Si, O, and C. The first and second portions contain substantially the same level of porosity.

Abstract: A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.

Abstract: A method for fabricating a semiconductor structure includes providing a substrate and a first layer over the substrate, wherein the first layer includes one or more overlay marks. The method further includes forming one or more layers on the first layer and performing a dark field (DF) inspection on the one or more overlay marks underlying the one or more layers to receive a post-film-formation data.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure. The method comprises providing a substrate and a patterned layer formed on the substrate, one or more overlay marks being formed on the patterned layer; performing a pre-film-formation overlay inspection using a bright field (BF) inspection tool to receive a pre-film-formation data on the one or more overlay marks on the patterned layer; forming one or more layers on the patterned layer; performing a post-film-formation overlay inspection using a dark field (DF) inspection tool to receive a post-film-formation data on the one or more overlay marks underlying the one or more layers; and determining whether the pre-film-formation data matches the post-film-formation data.