Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An adjusting structure for a seat tube of a bicycle includes a seat tube, two engaging blocks, two cover members, and a locking unit, wherein two engaging blocks are symmetrically provided on two sides of a positioning seat of the seat tube, and the engaging blocks engages with each other by using the positioning seat, the two cover members are symmetrically fixed on outer sides of the two engaging blocks, and a locking unit laterally passes through the above-mentioned components and allows to be alternatively rotated tightly or loosely, thereby adjusting a saddle to become inclined and to move forward and backward easily.

Abstract: An adjusting structure for a seat tube of a bicycle includes a seat tube, two engaging blocks, two cover members, and a locking unit, wherein two engaging blocks are symmetrically provided on two sides of a positioning seat of the seat tube, and the engaging blocks engages with each other by using the positioning seat, the two cover members are symmetrically fixed on outer sides of the two engaging blocks, and a locking unit laterally passes through the above-mentioned components and allows to be alternatively rotated tightly or loosely, thereby adjusting a saddle to become inclined and to move forward and backward easily.