Abstract: The present disclosure relates to a field of chip technology, and discloses a three-phase inverter power chip and a preparation method therefor. The preparation method includes: forming active areas on a substrate and an isolation area located outside the active areas; forming a source electrode, a drain electrode and a gate electrode of a transistor in each active area; forming a first bond pad, second bond pads, third bond pads and fourth bond pads in the isolation area; the source electrode, the drain electrode and the gate electrode of the chip being extended to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto; and electrically connecting the source electrode, the drain electrode and the gate electrode of the transistor to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto.

Abstract: A vacuum attachment tool includes a hollow body extending from a first end to a second end and defining a flow path, and a conduit connector disposed at the second end of the hollow body. The conduit connector includes an inner collar having an inner diameter sized to receive a first vacuum conduit having a first diameter, and an outer collar having an inner diameter sized to receive a second vacuum conduit having a second diameter greater than the first diameter. The outer collar is formed separately from the inner collar and is coupled to the inner collar.

Abstract: An apparatus includes a display panel and a display apparatus. The display panel includes: a substrate; a plurality of light-emitting devices having different light-emitting areas, the light-emitting devices being located on the substrate; a first refractive index layer, which includes opening regions corresponding to the light-emitting devices, projections of the opening regions on the substrate at least partially overlapping with projections of the light-emitting devices on the substrate, the contour shapes of the cross sections of sidewalls of at least a portion of the opening regions in the direction parallel to the substrate surface including concave-convex curves, and the first refractive index layer being used to reflect light emitted by the light-emitting devices on the sidewalls; and a second refractive index layer, which is located on the side of the first refractive index layer facing away from the substrate.

Abstract: Disclosed are a cell structure of a semiconductor device, a preparation method thereof and a semiconductor device. The cell structure includes: a substrate of a first conductive type; at least one first trench gate, at least one second trench gate, at least one third trench gate, and at least one fourth trench gate that are sequentially disposed side by side in an upper surface of the substrate; a source region of the first conductive type located in an upper surface of the well region and disposed on two sides of each trench gate; and an emitter metal layer located above the substrate and electrically connected to the source region, where the first trench gate, the second trench gate, and the third trench gate are isolated from the emitter metal layer by a first interlayer dielectric layer, and the fourth trench gate is electrically connected to the emitter metal layer.

Abstract: Disclosed are an intelligent power module and a manufacturing method thereof, which relate to the technical field of electronic devices. The intelligent power module includes a substrate, wherein a chip and a plurality of conductive pins are arranged on the substrate, one end of each of the conductive pins is connected to the chip, and a solder pin is formed at an end portion of the other end of the conductive pin; and an external pin frame, including a plurality of leads, and a connection structure is formed at an end portion of one end of each of the lead; and the connection structure includes a connection portion, and support portions, wherein an arrangement direction of the support portions is the same as that of the solder pins, an accommodation space is formed between the two support portions, and the solder pin is located between the two support portions.

Abstract: A display substrate and a display device are provided. In the display substrate, the display sub-pixel is located in a display region, the display sub-pixel and includes a first display sub-pixel, a second display sub-pixel, a third display sub-pixel, and a fourth display sub-pixel that emit light of colors different from each other; the dummy sub-pixel is located in a periphery region, the periphery region includes a dummy region and an edge region, the dummy sub-pixel is located in the dummy region of the periphery region, the dummy sub-pixel includes a first dummy sub-pixel, a second dummy sub-pixel, a third dummy sub-pixel, and a fourth dummy sub-pixel; and the display substrate further includes a spacer including a plurality of first spacers and a plurality of second spacers, the plurality of first spacers are located in the periphery region, the plurality of second spacers are located in the display region.

Abstract: A display panel and a display apparatus are provided in the present disclosure.

Abstract: Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transistor includes first and second cells which jointly include a drain electrode layer, an ohmic contact layer, a substrate layer, an epitaxial layer, an interlayer dielectric layer, and a source electrode layer, the first cell further includes a first deep well region, a second deep well region, a first shallow well region, a second shallow well region, a two first source region, a two second source region, a first gate oxide layer, and a first polysilicon gate, and the second cell further includes a third deep well region, a fourth deep well region, a third shallow well region, a fourth shallow well region, a second gate oxide layer, a third gate oxide layer, a second polysilicon gate, and a third polysilicon gate.

Abstract: An algae-based thermoplastic composition is provided that includes a protein-rich algae biomass selected from either microalgae, macroalgae or combinations thereof. The protein content is greater than or equal to 15% by weight of the algae biomass and the algae biomass is dried to a moisture content of less than or equal to 15% by weight and having a particle d99 of up to 200 microns. The dried algae biomass is at least 5% by weight of the thermoplastic composition. The composition includes a biodegradable resin configured to exhibit rheological properties suitable for blending with algae including a melting temperature less than 250° C. and a melt flow rate in excess of 0.01 g/10 min.

Abstract: A display substrate and a display device are provided. The display substrate includes: a color filter layer including a display sub-pixel and a dummy sub-pixel and a spacer including a plurality of first spacers located in the periphery region and a plurality of second spacers located in the display region, the display sub-pixel is located in a display region and includes a first display sub-pixel, a second display sub-pixel, a third display sub-pixel, and a fourth display sub-pixel; the dummy sub-pixel is located in a periphery region the dummy sub-pixel is located in the dummy region of the periphery region, the dummy sub-pixel includes a first dummy sub-pixel, a second dummy sub-pixel, a third dummy sub-pixel, and a fourth dummy sub-pixel; an orthographic projection of the first spacer on the first base substrate has no overlap with an orthographic projection of the dummy sub-pixel on the first base substrate.

Abstract: A display panel and a manufacturing method thereof, and a display device. The display panel includes a display area including a first and a second display area. The display panel includes: a base substrate; a driving circuit layer; anode structures located at the first display area, a gap being provided between adjacent anode structures, at least one anode structure including a functional layer and a first anode and an orthographic projection of the functional layer includes a portion not overlapped with an orthographic projection of the first anode; and a pixel defining layer including a pixel defining portion located in the gap. -0.1 microns?d1?d2?0.1 microns, wherein d1 is a thickness of the functional layer, d ? 2 = ? ? ( 2 ? m + 1 ) 2 ? ? "\[LeftBracketingBar]" n ? 1 - n ? 2 ? "\[RightBracketingBar]" , n1 and n2 are refractive indexes of the functional layer and the pixel defining portion respectively, ? is a wavelength of visible light, and m is an integer.

Abstract: The present application discloses a display panel, a display device and a method for manufacturing a display panel. The display panel includes a first display area, including a plurality of first light emitting units and a first driving layer for driving the plurality of first light emitting units, and a second display area, at least partially surrounded by the first display area, and making ambient light at least partially transmitted. The first driving layer includes a first light shielding pattern, the first light shielding pattern at least partially surrounding the second display area and including a hollow structure which exposes at least part of the second display area.

Abstract: A display panel, a display device, and a method for manufacturing the display panel. The display panel includes a base substrate. The base substrate includes a display area and a functional area, the functional area includes a light-transmitting region, the light-transmitting region includes a plurality of pixel units, and the plurality of pixel units is capable of emitting white light. Each of the pixel units includes at least one sub-pixel, each of the pixel units further includes a cathode, orthographic projections of a plurality of cathodes onto the base substrate are separated from each other, and an orthographic projection of an effective light-emitting area of each of the sub-pixels onto the base substrate is within the orthographic projection of the cathode of a corresponding one of the pixel units onto the base substrate.

Abstract: The present disclosure provides a display device and a manufacturing method thereof. The display device includes a display panel and a TOF sensor arranged at a side of the display panel away from a display surface. Detection light received by the TOF sensor is allowed to pass through a target light-transmitting region of the display panel. A light reflection interference layer is arranged on a surface of the target light-transmitting region facing the TOF sensor, and configured to adjust a transmission direction of reflected light between the display panel and a lens of the TOF sensor.

Abstract: A device may include a housing including an accommodating cavity and an insertion opening configured to allow insertion of a detector into the accommodating cavity. The device may also include a locking mechanism configured to prevent the detector from leaving the accommodating cavity. The device may also include a charging assembly arranged on the housing. The charging assembly may include a charging head and an elastic element configured to drive the charging head away from a charging port of the detector.

Abstract: The present disclosure discloses a trench Insulated Gate Bipolar Transistor (IGBT) packaging structure and a method for manufacturing the trench Insulated Gate Bipolar Transistor packaging structure. The trench IGBT packaging structure includes: a trench IGBT, which includes an emitting electrode metal layer, and a trench gate electrode; a lead frame, which includes a chip placement area and an emitting electrode lead-out end; a first bonding wire connecting the emitting electrode metal layer and an emitting electrode pin. One end of the first bonding wire is connected to a surface, away from the trench gate electrode, of the emitting electrode metal layer to form a strip-shaped first solder joint, the other end is connected to the emitting electrode lead-out end to form a second solder joint, and an extension direction of the first solder joint is perpendicular to an extension direction of the trench of the trench gate electrode.

Abstract: A display panel (10), including a first display region (11) and a second display region (12); pixel density of the first display region (11) is the same as that of the second display region (12); the first display region (11) includes a first pixel unit (112), which includes a first pixel defining layer (1121) and a first pixel anode (1122) corresponding to the first pixel defining layer (1121); the second display region (12) includes a second pixel unit (122), which includes a second pixel defining layer (1221) and a second pixel anode (1222) corresponding to the second pixel defining layer (1221); opening area of the first pixel defining layer (1121) is smaller than that of the second pixel defining layer (1221); and exposed area of the first pixel anode (1122) is smaller than that of the second pixel anode (1122). The present application also discloses an electronic device.

Abstract: The present disclosure provides an X-ray machine, which comprises a C-shaped arm. The C-shaped arm includes a connecting arm, a first support arm, and a second support arm. The first support arm and the second support arm are separately movably connected to the connecting arm. The first support arm moves relative to the connecting arm to move close to or away from the second support arm, and the connecting arm moves to drive the first support arm to move close to or away from the second support arm. An adjustable range of a distance between the first support arm and the second support arm is wider, so that when the radiation source is arranged on the second support arm and the detector is arranged on the first support arm, an adjustable range of a distance (SID) between the radiation source and the detector is wider.

Abstract: A display panel (100) and a display apparatus (1000) having the same. The display panel (100) is provided with a preset area (101), a transmitting sensor (201) and a receiving sensor (202) of a time-of-flight device (200) are adapted to be provided on a non-display side of the preset area (101), and light emitted from the transmitting sensor (201) is adapted to be transmitted from the preset area (101) to a display side of the display panel (100), and be reflected by a to-be-detected object on the display side back to a non-display side of the display panel (100), so as to be received by the receiving sensor (202).

Abstract: The present disclosure relates to disk separator plates that include a coating to increase the water contact angle of the exterior surface of the disk separator plate so as to decrease its wettability. The present disclosure also involves hard disk drives that include such a disk separator plate and related methods of forming such a coating.