Patents by Inventor Bo-Wei Chou
Bo-Wei Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240111849Abstract: A media docking device includes an input circuit, an output circuit and a processing circuit. The input circuit is electrically connected to a media source device for receiving media data. The output circuit is electrically connected to a media play device. The processing circuit is electrically connected to the input circuit and the output circuit. The processing circuit determines if a verification procedure is passed. If the verification procedure is passed, the processing circuit transfers the media data to the media play device. If the verification procedure is not passed, the processing circuit limits a transmission of the media data, such that the media data will not be completely played by the media play device.Type: ApplicationFiled: October 4, 2023Publication date: April 4, 2024Inventors: Chien-Wei CHEN, Tsung-Han LI, You-Wen CHIOU, Kuan-Chi CHOU, Bo Yu LAI
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Publication number: 20240114207Abstract: A media docking device includes an input module, an output module and a processing module. The input module is electrically connected to a media source device for receiving media data. The output module is electrically connected to a media play device. The processing module determines if an instruction is received from the media source device or a remote device. If the instruction is not received, the processing module transfers the media data to the output module to transmit to the media play device. If the instruction is received, the processing module limits a transmission of the media data according to the instruction, such that the media data will not be completely played by the media play device.Type: ApplicationFiled: October 4, 2023Publication date: April 4, 2024Inventors: Chien-Wei CHEN, Tsung-Han LI, You-Wen CHIOU, Kuan-Chi CHOU, Bo Yu LAI
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Publication number: 20230377912Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: ApplicationFiled: July 28, 2023Publication date: November 23, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU
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Publication number: 20230369056Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.Type: ApplicationFiled: May 12, 2022Publication date: November 16, 2023Inventors: Chung-Wei CHANG, Bo-Wei CHOU, Chin-Ming LIN, Ping-Jung HUANG, Pi-Chun YU, Bi-Ming YEN, Peng SHEN
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Patent number: 11784065Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: GrantFiled: May 6, 2019Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar Singh, Bo-Wei Chou, Jui-Ming Shih, Wen-Yu Ku, Ping-Jung Huang, Pi-Chun Yu
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Publication number: 20230062572Abstract: A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Wei CHANG, Chin-Ming LIN, Peng SHEN, Bo-Wei CHOU, Ping-Jung HUANG
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Publication number: 20190259636Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.Type: ApplicationFiled: May 6, 2019Publication date: August 22, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU
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Patent number: 10283384Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.Type: GrantFiled: April 27, 2015Date of Patent: May 7, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Manish Kumar Singh, Bo-Wei Chou, Jui-Ming Shih, Wen-Yu Ku, Ping-Jung Huang, Pi-Chun Yu
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Patent number: 10005990Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.Type: GrantFiled: September 18, 2014Date of Patent: June 26, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Hsi Yeh, Sung-Hsun Wu, Chao-Cheng Chen, Syun-Ming Jang, Bo-Wei Chou
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Patent number: 9881816Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.Type: GrantFiled: February 1, 2013Date of Patent: January 30, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Wen Li, Bo-Wei Chou, Shao-Yen Ku, Chen Ming-Jung
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Patent number: 9687885Abstract: Methods for cleaning a wafer in semiconductor fabrication are provided. The method includes providing a wafer. The method further includes cleaning the wafer in a first cleaning cycle by supplying a cleaning solution and supplying a first washing liquid mixed with a purge gas in sequence. The method also includes cleaning the wafer in a second cleaning cycle by supplying the cleaning solution and a second washing liquid mixed with the purge gas in sequence. The second cleaning cycle is initiated after the first cleaning cycle is finished.Type: GrantFiled: July 17, 2015Date of Patent: June 27, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ying-Jie Cai, Bo-Wei Chou, Shih-Hsing Kao, Shin-Hsien Yang, Tzu-Min Lee, Tai-Yung Yu, Wen-Cheng Lien
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Publication number: 20170014871Abstract: Methods for cleaning a wafer in semiconductor fabrication are provided. The method includes providing a wafer. The method further includes cleaning the wafer in a first cleaning cycle by supplying a cleaning solution and supplying a first washing liquid mixed with a purge gas in sequence. The method also includes cleaning the wafer in a second cleaning cycle by supplying the cleaning solution and a second washing liquid mixed with the purge gas in sequence. The second cleaning cycle is initiated after the first cleaning cycle is finished.Type: ApplicationFiled: July 17, 2015Publication date: January 19, 2017Inventors: Ying-Jie CAI, Bo-Wei CHOU, Shih-Hsing KAO, Shin-Hsien YANG, Tzu-Min LEE, Tai-Yung YU, Wen-Cheng LIEN
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Publication number: 20160314994Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.Type: ApplicationFiled: April 27, 2015Publication date: October 27, 2016Inventors: Manish Kumar SINGH, Bo-Wei CHOU, Jui-Ming SHIH, Wen-Yu KU, Ping-Jung HUANG, Pi-Chun YU
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Publication number: 20150000704Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.Type: ApplicationFiled: September 18, 2014Publication date: January 1, 2015Inventors: Ming-Hsi Yeh, Sung-Hsun Wu, Chao-Cheng Chen, Syun-Ming Jang, Bo-Wei Chou
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Publication number: 20140216499Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.Type: ApplicationFiled: February 1, 2013Publication date: August 7, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wen Li, Bo-Wei Chou, Shao-Yen Ku, Chen Ming-Jung