Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.

Abstract: The present disclosure relates to an apparatus and a method for wafer cleaning. The apparatus can include a wafer holder configured to hold a wafer; a cleaning nozzle configured to dispense a cleaning fluid onto a first surface (e.g., front surface) of the wafer; and a cleaning brush configured to clean a second surface (e.g., back surface) of the wafer. Using the cleaning fluid, the cleaning brush can clean the second surface of the wafer with a scrubbing motion and ultrasonic vibration.

Abstract: An adaptive controller used in a photoplethysmography sensing system, comprises a plurality of hardware circuits which are configured to: receive a photoplethysmography signal (hereinafter, “PPG signal”) processed; determine whether the PPG signal processed satisfies with a requirement; output the PPG signal processed if the PPG signal processed satisfies with a requirement; and adjust a gain of an amplifier for amplifying the PPG signal and/or a driving signal of a light source if the PPG signal processed does not satisfy with a requirement.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.

Abstract: The present disclosure relates to an apparatus and a method for wafer cleaning. The apparatus can include a wafer holder configured to hold a wafer; a cleaning nozzle configured to dispense a cleaning fluid onto a first surface (e.g., front surface) of the wafer; and a cleaning brush configured to clean a second surface (e.g., back surface) of the wafer. Using the cleaning fluid, the cleaning brush can clean the second surface of the wafer with a scrubbing motion and ultrasonic vibration.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.

Abstract: A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Abstract: A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.

Abstract: A semiconductor structure disposed on a temporary carrier board is provided. Multiple adhesive layers are disposed on the temporary carrier. The semiconductor structure includes an adhesive-layer structure and a micro light-emitting element. The adhesive-layer structure includes a mending adhesive layer and a buffer layer. The mending adhesive layer is disposed on the temporary carrier board. The micro light-emitting element is disposed on the mending adhesive layer. The buffer layer is disposed between the mending adhesive layer and the micro light-emitting element. A height of the mending adhesive layer is less than a height of each of the adhesive layers in a thickness direction of the temporary carrier board. A sum of the height of the mending adhesive layer and the height of the buffer layer is greater than or equal to a height of each of the adhesive layers.

Abstract: A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.

Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.

Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

Abstract: A micro LED display panel is provided. The micro LED display panel includes a driving substrate and a plurality of bonding pads disposed on the driving substrate and spaced apart from each other. The micro LED display panel also includes a plurality of micro LED structures electrically connected to the bonding pads. Each micro LED structure includes at least one electrode disposed on the side of the micro LED structure facing the driving substrate. The electrode has a normal contact surface and a side contact surface. The normal contact surface faces the driving substrate, and the side contact surface is laterally connected to the corresponding bonding pad.