Patents by Inventor Boaz Cohen
Boaz Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11940390Abstract: A system, method and computer readable medium for examining a specimen, the method comprising: obtaining defects of interest (DOIs) and false alarms (FAs) from a review subset selected from a group of potential defects received from an inspection tool, each potential defect is associated with attribute values defining a location of the potential defect in an attribute space; generating a representative subset of the group, comprising potential defects selected in accordance with a distribution of the potential defects within the attribute space, and indicating the potential defects in the representative subset as FA; and training a classifier using data informative of the attribute values of the DOIs, the potential defects of the representative subset, and respective indications thereof as DOIs or FAs, wherein the trained classifier is to be applied to at least some of the potential defects to obtain an estimation of a number of expected DOIs.Type: GrantFiled: June 1, 2022Date of Patent: March 26, 2024Assignee: Applied Materials Israel Ltd.Inventors: Yotam Sofer, Shaul Engler, Boaz Cohen, Saar Shabtay, Amir Bar, Marcelo Gabriel Bacher
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Patent number: 11931258Abstract: Devices, systems and methods are described herein to provide improved steerability for delivering a prosthesis to a body location, for example, for delivering a replacement mitral valve to a native mitral valve location. The delivery system can include a number of advantageous steering and delivery features, in particular for the transseptal delivery approach.Type: GrantFiled: April 30, 2020Date of Patent: March 19, 2024Assignee: EDWARDS LIFESCIENCES CORPORATIONInventors: Boaz Manash, Oren Cohen, Noam Nir, Ilan Tamir, Eitan Atias, Ofir Witzman, Michal Aliza Ruchelsman
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Publication number: 20240078659Abstract: There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining a runtime image of the semiconductor specimen, generating a reference image based on the runtime image using a machine learning (ML) model, and performing defect examination on the runtime image using the generated reference image. The ML model is previously trained during setup using a training set comprising one or more pairs of training images, each pair including a defective image and a corresponding defect-free image. The training comprises, for each pair, processing the defective image by the ML model to obtain a predicted image, and optimizing the ML model to minimize a difference between the predicted image and the defect-free image.Type: ApplicationFiled: September 6, 2022Publication date: March 7, 2024Inventors: Yehonatan Hai OFIR, Yehonatan RIDELMAN, Ran BADANES, Boris SHERMAN, Boaz COHEN
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Patent number: 11790515Abstract: A system for classifying a pattern of interest (POI) on a semiconductor specimen is disclosed. The system comprises a processor and memory circuitry. The memory circuitry is configured to obtain a high-resolution image of the POI, and to generate data usable for classifying the POI in accordance with a defectiveness-related classification. To generate the data, a machine learning model is utilized that has been trained in accordance with training samples. The training samples include a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI. The training samples also include a label associated with the image, the label being derivative of low-resolution inspection of the respective training pattern.Type: GrantFiled: May 23, 2022Date of Patent: October 17, 2023Assignee: Applied Materials Israel Ltd.Inventors: Irad Peleg, Ran Schleyen, Boaz Cohen
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Patent number: 11756188Abstract: Input data may be received. The input data may include an image of a pattern and location data that identifies a modified portion of the pattern. A processing device may determine a first parameter of a first dimension within the pattern and a second parameter of a second dimension outside of the pattern. A combined set may be generated based on the first parameter and the second parameter. A defect associated with the modified portion may be classified based on the combined set.Type: GrantFiled: March 14, 2022Date of Patent: September 12, 2023Assignee: Applied Materials Israel Ltd.Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Evgeny Bal, Ariel Shkalim
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Patent number: 11568531Abstract: There is provided a method of examination of a semiconductor specimen and a system thereof. The method comprises: using a trained Deep Neural Network (DNN) to process a fabrication process (FP) sample, wherein the FP sample comprises first FP image(s) received from first examination modality(s) and second FP image(s) received from second examination modality(s) which differs from the first examination modality(s), and wherein the trained DNN processes the first FP image(s) separately from the second FP image(s); and further processing by the trained DNN the results of such separate processing to obtain examination-related data specific for the given application and characterizing at least one of the processed FP images. When the FP sample further comprises numeric data associated with the FP image(s), the method further comprises processing by the trained DNN at least part of the numeric data separately from processing the first and the second FP images.Type: GrantFiled: June 3, 2020Date of Patent: January 31, 2023Assignee: Applied Materials Israel Ltd.Inventors: Ohad Shaubi, Denis Suhanov, Assaf Asbag, Boaz Cohen
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Publication number: 20220301151Abstract: A system of classifying a pattern of interest (POI) on a semiconductor specimen, the system comprising a processor and memory circuitry configured to: obtain a high-resolution image of the POI, and generate data usable for classifying the POI in accordance with a defectiveness-related classification, wherein the generating utilizes a machine learning model that has been trained in accordance with training samples comprising: a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI, and a label associated with the image, the label being derivative of low-resolution inspection of the respective training pattern.Type: ApplicationFiled: May 23, 2022Publication date: September 22, 2022Inventors: Irad PELEG, Ran SCHLEYEN, Boaz Cohen
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Patent number: 11449711Abstract: There is provided a method of defect detection on a specimen and a system thereof. The method includes: obtaining a runtime image representative of at least a portion of the specimen; processing the runtime image using a supervised model to obtain a first output indicative of the estimated presence of first defects on the runtime image; processing the runtime image using an unsupervised model component to obtain a second output indicative of the estimated presence of second defects on the runtime image; and combining the first output and the second output using one or more optimized parameters to obtain a defect detection result of the specimen.Type: GrantFiled: January 2, 2020Date of Patent: September 20, 2022Assignee: Applied Materials Isreal Ltd.Inventors: Ran Badanes, Ran Schleyen, Boaz Cohen, Irad Peleg, Denis Suhanov, Ore Shtalrid
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Publication number: 20220291138Abstract: A system, method and computer readable medium for examining a specimen, the method comprising: obtaining defects of interest (DOIs) and false alarms (FAs) from a review subset selected from a group of potential defects received from an inspection tool, each potential defect is associated with attribute values defining a location of the potential defect in an attribute space; generating a representative subset of the group, comprising potential defects selected in accordance with a distribution of the potential defects within the attribute space, and indicating the potential defects in the representative subset as FA; and training a classifier using data informative of the attribute values of the DOIs, the potential defects of the representative subset, and respective indications thereof as DOIs or FAs, wherein the trained classifier is to be applied to at least some of the potential defects to obtain an estimation of a number of expected DOIs.Type: ApplicationFiled: June 1, 2022Publication date: September 15, 2022Inventors: Yotam Sofer, Shaul Engler, Boaz Cohen, Saar Shabtay, Amir Bar, Marcelo Gabriel Bacher
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Patent number: 11423529Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.Type: GrantFiled: February 18, 2020Date of Patent: August 23, 2022Assignee: Applied Materials Isreal Ltd.Inventors: Doron Girmonsky, Rafael Ben Ami, Boaz Cohen, Dror Shemesh
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Publication number: 20220254000Abstract: There is provided a mask inspection system and a method of mask inspection. The method comprises: detecting, by the inspection tool, a runtime defect at a defect location on a mask of a semiconductor specimen during runtime scan of the mask, and acquiring, by the inspection tool after runtime and based on the defect location, a plurality sets of aerial images of the runtime defect corresponding to a plurality of focus states throughout a focus process window, each set of aerial images acquired at a respective focus state. The method further comprises for each set of aerial images, calculating a statistic-based EPD value of the runtime defect, thereby giving rise to a plurality of statistic-based EPD values each corresponding to a respective focus state, and determining whether the runtime defect is a true defect based on the plurality of statistic-based EPD values.Type: ApplicationFiled: April 26, 2022Publication date: August 11, 2022Inventors: Ariel SHKALIM, Vladimir OVECHKIN, Evgeny BAL, Ronen MADMON, Ori PETEL, Alexander CHERESHNYA, Oren Shmuel COHEN, Boaz COHEN
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Publication number: 20220222806Abstract: There is provided a method of automated defects' classification, and a system thereof. The method comprises obtaining data informative of a set of defects' physical attributes usable to distinguish between defects of different classes among the plurality of classes; training a first machine learning model to generate, for the given defect, a multi-label output vector informative of values of the physical attributes, thereby generating for the given defect a multi-label descriptor; and using the trained first machine learning model to generate multi-label descriptors of the defects in the specimen. The method can further comprise obtaining data informative of multi-label data sets, each data set being uniquely indicative of a respective class of the plurality of classes and comprising a unique set of values of the physical attributes; and classifying defects in the specimen by matching respectively generated multi-label descriptors of the defects to the multi-label data sets.Type: ApplicationFiled: March 24, 2020Publication date: July 14, 2022Inventors: Ohad SHAUBI, Boaz COHEN, Kirill SAVCHENKO, Ore SHTALRID
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Patent number: 11379972Abstract: A system of classifying a pattern of interest (POI) on a semiconductor specimen, where the system includes a processor and memory circuitry configured to obtain a high-resolution image of the POI, and generate data usable for classifying the POI in accordance with a defectiveness-related classification. Generating the data utilizes a machine learning model that has been trained in accordance with training samples. The training samples include a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI, and a label associated with the image. The label is derivative of low-resolution inspection of the respective training pattern.Type: GrantFiled: June 3, 2020Date of Patent: July 5, 2022Assignee: Applied Materials Israel Ltd.Inventors: Irad Peleg, Ran Schleyen, Boaz Cohen
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Publication number: 20220198639Abstract: Input data may be received. The input data may include an image of a pattern and location data that identifies a modified portion of the pattern. A processing device may determine a first parameter of a first dimension within the pattern and a second parameter of a second dimension outside of the pattern. A combined set may be generated based on the first parameter and the second parameter. A defect associated with the modified portion may be classified based on the combined set.Type: ApplicationFiled: March 14, 2022Publication date: June 23, 2022Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Evgeny Bal, Ariel Shkalim
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Patent number: 11360030Abstract: Disclosed is a system, method and computer readable medium for selecting a coreset of potential defects for estimating expected defects of interest. An example method includes obtaining a plurality of defects of interest (DOIs) and false alarms (FAs) from a review subset selected from a group of potential defects received from an inspection tool. The method further includes generating a representative subset of the group of potential defects. The representative subset includes potential defects selected in accordance with a distribution of the group of potential defects within an attribute space. The method further includes, upon training a classifier using data informative of the attribute values of the DOIs, the potential defects of the representative subset, and respective indications thereof as DOIs or FAs, applying the classifier to at least some of the potential defects to obtain an estimation of a number of expected DOIs in the specimen.Type: GrantFiled: February 4, 2020Date of Patent: June 14, 2022Assignee: Applied Materials Isreal LTDInventors: Yotam Sofer, Shaul Engler, Boaz Cohen, Saar Shabtay, Amir Bar, Marcelo Gabriel Bacher
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Patent number: 11348224Abstract: There is provided a mask inspection system and a method of mask inspection. The method comprises: during a runtime scan of a mask of a semiconductor specimen, processing a plurality of aerial images of the mask acquired by the mask inspection system to calculate a statistic-based Edge Positioning Displacement (EPD) of a potential defect, wherein the statistic-based EPD is calculated using a Print Threshold (PT) characterizing the mask and is applied to each of the one or more acquired aerial images to calculate respective EPD of the potential defect therein; and filtering the potential defect as a “runtime true” defect when the calculated statistic-based EPD exceeds a predefined EPD threshold, and filtering out the potential defect as a “false” defect when the calculated statistic-based EPD is lower than the predefined EPD threshold. The method can further comprise after-runtime EPD-based filtering of the plurality of “runtime true” defects.Type: GrantFiled: March 27, 2020Date of Patent: May 31, 2022Assignee: Applied Materials Israel Ltd.Inventors: Ariel Shkalim, Vladimir Ovechkin, Evgeny Bal, Ronen Madmon, Ori Petel, Alexander Chereshnya, Oren Shmuel Cohen, Boaz Cohen
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Patent number: 11348001Abstract: There are provided system and method of classifying defects in a semiconductor specimen. The method comprises: upon obtaining by a computer a Deep Neural Network (DNN) trained to provide classification-related attributes enabling minimal defect classification error, processing a fabrication process (FP) sample using the obtained trained DNN; and, resulting from the processing, obtaining by the computer classification-related attributes characterizing the at least one defect to be classified, thereby enabling automated classification, in accordance with the obtained classification-related attributes, of the at least one defect presented in the FP image.Type: GrantFiled: August 11, 2017Date of Patent: May 31, 2022Assignee: APPLIED MATERIAL ISRAEL, LTD.Inventors: Leonid Karlinsky, Boaz Cohen, Idan Kaizerman, Efrat Rosenman, Amit Batikoff, Daniel Ravid, Moshe Rosenweig
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Patent number: 11321633Abstract: There are provided a classifier and method of classifying defects in a semiconductor specimen. The method comprises receiving defects classified into a majority class, each having values for plurality of attributes, some defects belonging to a minority class, and some to the majority; selecting an attribute subset and defining differentiators for attributes wherein a second classifier using the subset and differentiators classifies correctly to minority and majority classes at least part of the defects; generating a training set comprising: defects of the majority and minority classes, and additional defects which the second classifier classifies as minority; training, upon the training set, subset, and differentiators, an engine obtaining a confidence level that a defect belongs to the majority class; applying the engine to second defects classified to the majority class, to obtain a confidence level of classifying each defect to the majority class; and outputting defects having a low confidence level.Type: GrantFiled: December 20, 2018Date of Patent: May 3, 2022Assignee: Applied Materials Israel Ltd.Inventors: Assaf Asbag, Boaz Cohen, Shiran Gan-Or
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Patent number: 11276160Abstract: A captured image of a pattern and a reference image of the pattern may be received. A contour of interest of the pattern may be identified. One or more measurements of a dimension of the pattern may be determined for each of the reference image and the captured image with respect to the contour of interest of the pattern. A defect associated with the contour of interest may be classified based on the determined one or more measurements of the dimension of the pattern for each of the reference image and the captured image.Type: GrantFiled: October 1, 2018Date of Patent: March 15, 2022Assignee: Applied Materials Israel LTD.Inventors: Vadim Vereschagin, Roman Kris, Ishai Schwarzband, Boaz Cohen, Ariel Shkalim, Evgeny Bal
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Publication number: 20220067523Abstract: A computerized system and method of training a deep neural network (DNN) is provided. The DNN is trained in a first training cycle using a first training set including first training samples. Each first training sample includes at least one first training image synthetically generated based on design data. Upon receiving a user feedback with respect to the DNN trained using the first training set, a second training cycle is adjusted based on the user feedback by obtaining a second training set including augmented training samples. The DNN is re-trained using the second training set. The augmented training samples are obtained by augmenting at least part of the first training samples using defect-related synthetic data. The trained DNN is usable for examination of a semiconductor specimen.Type: ApplicationFiled: November 8, 2021Publication date: March 3, 2022Inventors: Leonid KARLINSKY, Boaz COHEN, Idan KAIZERMAN, Efrat ROSENMAN, Amit BATIKOFF, Daniel RAVID, Moshe ROSENWEIG