Abstract: Impurities can be eluted simultaneously from a plurality of local areas of a surface layer of a semiconductor substrate. A supporting unit supports the substrate, and a sample plate is disposed on the surface of the substrate. The sample plate has a plurality of holes that expose the local areas of the surface of the substrate. Eluant is provided onto the local areas of the surface layer of the substrate through the holes in the sample plate. The impurities are thus dissolved by the eluant to produce a sample. A nozzle transfers the sample from the local areas of the surface of the substrate to a plurality of sample cups. Therefore, samples from the surface layer of the substrate may be produced in a short amount of time.

Abstract: Impurities can be eluted simultaneously from a plurality of local areas of a surface layer of a semiconductor substrate. A supporting unit supports the substrate, and a sample plate is disposed on the surface of the substrate. The sample plate has a plurality of holes that expose the local areas of the surface of the substrate. Eluant is provided onto the local areas of the surface layer of the substrate through the holes in the sample plate. The impurities are thus dissolved by the eluant to produce a sample. A nozzle transfers the sample from the local areas of the surface of the substrate to a plurality of sample cups. Therefore, samples from the surface layer of the substrate may be produced in a short amount of time.

Abstract: A method of concentrating chemicals for semiconductor devices, which includes the steps of heating a sample container by using a high-energy light source, vaporizing the chemicals by injecting a high-temperature gas into the sample container through an injection opening in the sample container and discharging the vaporized chemicals by the pressure of the gas through a gas outlet formed on the sample container. An apparatus of concentrating chemicals for semiconductor devices includes a sample container having a sample-supply window, a gas-injection opening and a gas outlet. A high-energy light source heats the sample container and a gas-supply source supplies the gas through a gas-injection opening in the sample container. A gas-heating device located between the sample container and the gas-supply source heats the gas provided by the gas-supply source.