Patents by Inventor Bon-Woong Koo
Bon-Woong Koo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9978554Abstract: An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.Type: GrantFiled: January 26, 2017Date of Patent: May 22, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Jun Lu, Frank Sinclair, Eric D. Hermanson, Joseph E. Pierro, Michael D. Johnson, Michael S. DeLucia, Antonella Cucchetti
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Publication number: 20180138020Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.Type: ApplicationFiled: January 5, 2018Publication date: May 17, 2018Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Yong-Seok Hwang, Kyong-Jae Chung
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Publication number: 20180122618Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.Type: ApplicationFiled: January 2, 2018Publication date: May 3, 2018Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero
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Publication number: 20180087148Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.Type: ApplicationFiled: November 10, 2017Publication date: March 29, 2018Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
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Publication number: 20180090297Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.Type: ApplicationFiled: November 27, 2017Publication date: March 29, 2018Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
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Patent number: 9922795Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.Type: GrantFiled: July 27, 2015Date of Patent: March 20, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
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Publication number: 20180068830Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.Type: ApplicationFiled: November 10, 2017Publication date: March 8, 2018Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
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Patent number: 9899193Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.Type: GrantFiled: November 2, 2016Date of Patent: February 20, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Yong-Seok Hwang, Kyong-Jae Chung
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Patent number: 9887067Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.Type: GrantFiled: April 21, 2015Date of Patent: February 6, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero
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Patent number: 9865430Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.Type: GrantFiled: November 23, 2015Date of Patent: January 9, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Vikram M. Bhosle, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Svetlana B. Radovanov, Min-Sung Jeon, Peter F. Kurunczi, Christopher J. Leavitt
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Patent number: 9859098Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.Type: GrantFiled: December 22, 2015Date of Patent: January 2, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
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Patent number: 9840772Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.Type: GrantFiled: May 11, 2017Date of Patent: December 12, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
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Publication number: 20170247791Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.Type: ApplicationFiled: May 11, 2017Publication date: August 31, 2017Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
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Patent number: 9711505Abstract: A semiconductor device includes a gate structure on a substrate. The gate structure includes a first gate insulation pattern, a conductive pattern for controlling a threshold voltage, a first gate electrode and a first mask sequentially stacked. A dummy gate structure is spaced apart from the gate electrode. The dummy gate structure includes a first stressor pattern including titanium oxide. Source/drain regions are adjacent to the gate structure. The source/drain regions are doped with p-type impurities. The first stressor pattern may apply a stress onto the channel region of a transistor, and consequently the transistor having good electrical characteristics may be obtained.Type: GrantFiled: April 8, 2016Date of Patent: July 18, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung-Hak Hong, Bon-Woong Koo, Sung-Il Park, Kyu-Baik Chang, Keun-Hwi Cho, Dae-Won Ha
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Publication number: 20170178857Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.Type: ApplicationFiled: December 22, 2015Publication date: June 22, 2017Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
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Patent number: 9677171Abstract: A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.Type: GrantFiled: June 6, 2014Date of Patent: June 13, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Christopher J. Leavitt, John A. Frontiero, Timothy J. Miller, Svetlana B. Radovanov
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Publication number: 20170062182Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas PT Bateman, Timothy J. Miller, Vikram M. Bhosle
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Publication number: 20170032927Abstract: An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.Type: ApplicationFiled: July 27, 2015Publication date: February 2, 2017Inventors: Bon-Woong Koo, Alexandre Likhanskii, Svetlana B. Radovanov, Anthony Renau
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Publication number: 20170033217Abstract: A semiconductor device includes a gate structure on a substrate. The gate structure includes a first gate insulation pattern, a conductive pattern for controlling a threshold voltage, a first gate electrode and a first mask sequentially stacked. A dummy gate structure is spaced apart from the gate electrode. The dummy gate structure includes a first stressor pattern including titanium oxide. Source/drain regions are adjacent to the gate structure. The source/drain regions are doped with p-type impurities. The first stressor pattern may apply a stress onto the channel region of a transistor, and consequently the transistor having good electrical characteristics may be obtained.Type: ApplicationFiled: April 8, 2016Publication date: February 2, 2017Inventors: BYOUNG-HAK HONG, BON-WOONG KOO, SUNG-IL PARK, KYU-BAIK CHANG, KEUN-HWI CHO, DAE-WON HA
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Patent number: 9524849Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.Type: GrantFiled: November 26, 2013Date of Patent: December 20, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas PT Bateman, Timothy J. Miller, Vikram M. Bhosle