Abstract: A system and a method of measuring irregularity of a glass substrate using only a reflection light reflected by an upper surface of reflection lights reflected by the upper surface and a lower surface of the glass substrate are disclosed. The system includes a light source section configured to output a first light to the glass substrate and a screen.

Abstract: A system and a method of measuring irregularity of a glass substrate using only a reflection light reflected by an upper surface of reflection lights reflected by the upper surface and a lower surface of the glass substrate are disclosed. The system includes a light source section configured to output a first light to the glass substrate and a screen.

Abstract: Provided is a technology for detecting a leak of a process chamber in real time generated from a semiconductor substrate manufacturing process using an apparatus using plasma in a vacuum state. The real time leak detection system of a process chamber can detect a leak through end point detection (EPD) whether spectrums of nitrogen, oxygen, argon, and so on, are generated in a plasma spectrum as external air is injected into the process chamber due to the leak, and determining occurrence of the leak from the process chamber through a helium leak detector on the basis of the detection signal, without shutdown of equipment. Therefore, when the leak occurs from the process chamber, its detection time can be reduced to improve productivity. In addition, cracks in the process chamber used in a high temperature HDP CVD process can be readily checked to prevent damage to the process chamber and accidents due to the damage.