Patents by Inventor Bong Yool Ryu

Bong Yool Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor having double gate insulating layer
    Patent number: 5751017
    Abstract: A thin film transistor and method includes a substrate and a first semiconductor layer formed on the substrate. A first insulating layer is formed on the first semiconductor layer, and a doped semiconductor layer is formed on an upper portion of the first semiconductor layer at first and second sides of the first insulating layer. A second insulating layer is formed on the first insulating layer and the doped semiconductor layer, the second insulating layer having contact holes. A gate electrode is formed on a portion of the second insulating layer, and source and drain electrodes are formed on portions of the second insulating layer, the source and drain electrodes contacting the doped semiconductor layer through the contact holes, respectively.
    Type: Grant
    Filed: April 14, 1997
    Date of Patent: May 12, 1998
    Assignee: LG Electronics Inc.
    Inventors: Jin Jang, Hong Joo Lim, Bong Yool Ryu