Abstract: Provided is a method for manufacturing a photomask. The method comprises providing a pre-photomask, the pre-photomask including a first area, a second area configured to perform a first duty correction, and a third area configured to perform a second duty correction; forming a pre-photoresist pattern using the pre-photomask such that the pre-photoresist pattern has a stepped shape having at least three steps in a cross-sectional view of the pre-photoresist pattern; analyzing a profile of the pre-photoresist pattern in the cross-sectional view; and inserting an auxiliary pattern into at least one of the first to third areas, based on a result of the analyzing of the profile of the pre-photoresist pattern.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating alopecia areata acting as a functional antagonist for SIP receptor's subtypes S1PR1 and S1PR4, and more particularly, relates to a pharmaceutical composition containing as an active ingredient a sphingolipid compound acting as a functional antagonist for S1PR1 and S1PR4, does not cause cardiovascular side effects, and is effective in preventing or treating alopecia areata.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating alopecia areata acting as a functional antagonist for S1P receptor's subtypes S1PR1 and S1PR4, and more particularly, relates to a pharmaceutical composition containing as an active ingredient a sphingolipid compound acting as a functional antagonist for S1PR1 and S1PR4, does not cause cardiovascular side effects, and is effective in preventing or treating alopecia areata.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating inflammatory bowel disease acting as a functional antagonist for S1PR1 and S1PR4 of S1P receptors, and more specifically, to a pharmaceutical composition including, as an active ingredient, a sphingolipid compound which does not cause cardiovascular side effects by acting as a functional antagonist for S1PR1 and S1PR4 and has an effect of preventing or treating inflammatory bowel disease.

Abstract: A semiconductor device comprises a substrate that extends in first and second directions and includes a cell region and an extension region that extends from the cell region in the first direction, first and second insulating layers alternately stacked on the substrate in a third direction, a conductive line disposed on one sidewall of the second insulating layer in the second direction, a conductive pillar that extends in the third direction and penetrates through the first insulating layer, a semiconductor layer disposed on one sidewall of the conductive pillar and that extends in the third direction, and a ferroelectric layer disposed between the conductive line and the semiconductor layer and that extends in the third direction. The conductive line includes first and second conductive patterns spaced apart from each other in the second direction, and the second insulating layer is disposed between the first and second conductive patterns.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: The present invention relates to a heterocyclic compound represented by Chemical Formula 1 that can be used for the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A vertical semiconductor device includes a plurality of channel connection patterns, a lower insulation layer, a supporting layer, a stacked structure, and a channel structure. The channel connection patterns, on which the lower insulation layer is formed, contact a substrate. The supporting layer is formed on the lower insulation layer to be spaced apart from the channel connection patterns, and includes polysilicon doped with impurities. The stacked structure is formed on the supporting layer, and includes insulation layers and gate electrodes to form a memory cell string. The channel structure passes through the stacked structure, the supporting layer and the lower insulation layer, and includes a charge storage structure and a channel which contacts the channel connection patterns. The charge storage structure and the channel face the gate electrodes and the supporting layer. The supporting layer serves as a gate of a gate induced drain leakage (GIDL) transistor.

Abstract: A fusion protein comprising factor VII (FVII) and transferrin according to the present invention has an improved specific activity of FVII compared to existing FVII fusion proteins comprising other fusion partners than transferrin, and thus can be effectively used in a therapy using FVII.

Abstract: A vertical semiconductor device includes a plurality of channel connection patterns, a lower insulation layer, a supporting layer, a stacked structure, and a channel structure. The channel connection patterns, on which the lower insulation layer is formed, contact a substrate. The supporting layer is formed on the lower insulation layer to be spaced apart from the channel connection patterns, and includes polysilicon doped with impurities. The stacked structure is formed on the supporting layer, and includes insulation layers and gate electrodes to form a memory cell string. The channel structure passes through the stacked structure, the supporting layer and the lower insulation layer, and includes a charge storage structure and a channel which contacts the channel connection patterns. The charge storage structure and the channel face the gate electrodes and the supporting layer. The supporting layer serves as a gate of a gate induced drain leakage (GIDL) transistor.

Abstract: The present invention relates to a heterocyclic compound represented by Chemical Formula 1 that can be used for the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: The present invention provides a novel 2-pyridyl substituted imidazole derivative, or a pharmaceutically acceptable salt or solvate thereof, which selectively inhibits the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4); a pharmaceutical composition comprising same as an active ingredient; and a use of the 2-pyridyl substituted imidazole derivative for the manufacture of a medicament for preventing or treating a disease mediated by ALK5 and/or ALK4 receptors in a mammal.

Abstract: The present invention relates to a heterocyclic compound having a novel structure that can be used in the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.

Abstract: The present invention relates to a heterocyclic compound having a novel structure that can be used in the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.