Abstract: A positive photoresist composition having improved sensitivity and resolution, a method of making the composition, and a method for forming a pattern during semiconductor processing using the composition are disclosed. The photoresist composition includes: (i) a photosensitive material obtained by mixing a first photosensitive compound represented by formula (1) and a second photosensitive compound represented by formulae (2a) or (2b); (ii) a resin; and (iii) a solvent. The invention enables the formation of patterns with an exceptional profile due to a high degree of sensitivity and resolution of the photoresist composition.

Abstract: A thinner composition used in a washing process for manufacturing semiconductor devices includes at least ethyl lactate (EL) and ethyl-3-ethoxy propionate (EEP), and preferably, additionally includes Gamma-butyrolactone. The thinner composition has high volatility and low viscosity as well as a sufficient solubility rate for rinsing photoresist on the wafer when spraying the thinner through nozzles. Photoresist at the edge or backside of a wafer can be effectively removed at a sufficiently rapid rate, so that the yield of the semiconductor devices is enhanced. In addition, any remaining photoresist attached to the surface can be completely removed to enable the reuse of the wafer, with resulting economic benefits.