Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

Abstract: A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

Abstract: A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided.

Abstract: A system and methods are drawn to a self-injection locked tunable laser using an InGaN/GaN gain chip to produce precise laser output at visible wavelengths. An external cavity length is adjusted by motorized stage to tune a resonance frequency of the external cavity to match the resonance frequency of the laser and self-injection lock the mode of the wavelength. Fine tuning is provided by adjusting the tilt angle of the partially reflective mirror. The laser diode may be operated at a range of injection currents and temperatures and provides precise control of output laser wavelengths and linewidths.

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided.

Abstract: A system and methods are drawn to a self-injection locked tunable laser using an InGaN/GaN gain chip to produce precise laser output at visible wavelengths. An external cavity length is adjusted by motorized stage to tune a resonance frequency of the external cavity to match the resonance frequency of the laser and self-injection lock the mode of the wavelength. Fine tuning is provided by adjusting the tilt angle of the partially reflective mirror. The laser diode may be operated at a range of injection currents and temperatures and provides precise control of output laser wavelengths and linewidths.

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: An optical mirror diversity receiver for a visible light communication system is provided with an array of photodiodes each having an optical-signal-receiving area, with a mirror positioned between an adjacent pair of photodiodes to preferentially redirect light toward one of the photodiodes while also blocking light that would otherwise be received at the photodiode. An angle-aided mirror diversity receiver is also provided with surfaces of the photodiodes aligned relative to the mirror to yield reductions in correlation.

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: Devices for photoelectrodes for water splitting based on indium nanowires on flexible substrates as well as methods of manufacture by transferring nanowire arrays to flexible substrates.

Abstract: Embodiments describe a photoelectrode including a first III-nitride nanowire layer, a transparent substrate in contact with the first nanowire layer at a first substrate surface and a second III-nitride nanowire layer in contact with the substrate at a second substrate surface, substantially opposite the first substrate surface.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.