Abstract: Embodiments herein relate to systems, apparatuses, or processes for a connector for a modular memory package that includes one or more memory dies on a substrate, where the connector directly electrically couples electrical contacts at an edge and on each side the substrate of the memory package to electrical contacts at an edge and on each side of another substrate that includes a compute die. The connector may include a first plurality of leads that are substantially parallel with each other, and a second plurality of leads that are substantially parallel with each other that are below the first plurality of leads and electrically couple the two substrates. Other embodiments may be described and/or claimed.

Abstract: A method of recovering a bonding apparatus from a bonding failure to resume a normal operating state for semiconductor chip fabrication is disclosed. The bonding apparatus comprises: i) a bonding tool for bonding a wire between a semiconductor chip and a substrate; and ii) a position sensor. Specifically, the method comprises the steps of: a) the position sensor determining a position of the bonding tool when the bonding tool contacts a surface to bond the wire to the substrate; b) the bonding apparatus detecting a bonding failure caused by detachment of the semiconductor from the substrate based on the position of the bonding tool; and c) the bonding apparatus detaching the semiconductor chip from the wire.

Abstract: A method of recovering a bonding apparatus from a bonding failure to resume a normal operating state for semiconductor chip fabrication is disclosed. The bonding apparatus comprises: i) a bonding tool for bonding a wire between a semiconductor chip and a substrate; and ii) a position sensor. Specifically, the method comprises the steps of: a) the position sensor determining a position of the bonding tool when the bonding tool contacts a surface to bond the wire to the substrate; b) the bonding apparatus detecting a bonding failure caused by detachment of the semiconductor from the substrate based on the position of the bonding tool; and c) the bonding apparatus detaching the semiconductor chip from the wire.

Abstract: A plastic leaded chip carrier (PLCC) package includes an encapsulant having a domed portion, which is formed as an integral single piece structure. The encapsulant may be formed using an injection molding process. Another injection molding process may be used to form a structural body of the PLCC package.

Abstract: A reliable, long-lived soldered electrical connection is made to a ceramic substrate having a thick-film metallization thereon, over which is deposited a joint-structure-stabilizing thin-film metallization. The thin-film metallization is a multilayered structure having an adhesion layer overlying and in contact with the thick-film metallization, a readily wettable base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer. An electrical conductor is soldered to the thin-film metallization of the ceramic substrate. The electrical conductor may be a bonding pad of a flip chip having a solder bump thereon.

Abstract: A reliable, long-lived soldered electrical connection is made to a ceramic substrate having a thick-film metallization thereon, over which is deposited a joint-structure-stabilizing thin-film metallization. The thin-film metallization is a multilayered structure having an adhesion layer overlying and in contact with the thick-film metallization, a readily wettable base-metal layer overlying and in contact with the adhesion layer, and an oxidation-prevention layer overlying and in contact with the base-metal layer. An electrical conductor is soldered to the thin-film metallization of the ceramic substrate. The electrical conductor may be a bonding pad of a flip chip having a solder bump thereon.

Abstract: An optical filter, comprising a first optical waveguide, a second optical waveguide and means for expanding light from the first optical waveguide into a beam, and at least one optical flat inserted partially into the beam so that a fraction of the light passes through each optical flat and a means for focussing the light into the second optical waveguide. In its simplest form the device has a Mach-Zehnder (sinusoidal) transmission characteristic. The filter can be tuned both in wavelength and extinction either mechanically or electrically. More complex (non-sinusoidal) characteristic can also be obtained.

Abstract: A method of making a lightweight, microwave electronic structure includes the steps of forming a rigid, glass structure having a desired density by a sol-gel process and thereafter uniformly coating the formed glass structure with an adherent and uniform conductor. The sol-gel process may be carried out by polymerizing a mixture comprising silicon alkoxide, water and an alcohol. The coating process may be carried out by coating the glass structure with a solution comprising an organic compound of a metal dissolved in an organic solvent and thereafter volatizing the organic solvent.

Abstract: Sintered ceramic preforms for metal matrix composites fabricated by a method comprising: (a) preparing a homogeneous mixture containing appropriate amounts of silicon-containing fibers/particulates, such as silicon carbide, at least one solvent, at least one polymer, and an oxide-containing material, such as boric acid or phosphoric acid, capable of forming a low melting silicate with a silicon oxide, such as a borosilicate; (b) shaping a green ceramic preform from the mixture, such as by injection molding; (c) removing the solvent(s) and the polymer(s); (d) oxidizing the surfaces of the silicon-containing fibers to form a layer of the silicon oxide thereon; (e) heating the preform to a temperature sufficient to react the oxide-containing material with the silicon oxide to form the low melting silicate material; (f) liquid phase sintering the fibers in the presence of liquid silicate material to strengthen the preform; and (g) cooling the sintered preform to ambient.

Abstract: The surface of a fatigue-resistant eutectic or near-eutectic lead/tin solder containing at least one doping element of cadmium, indium, and antimony is treated with an aqueous solution of an acidic chloride or acidic nitrate. The surface treatment method of the present invention removes, or substantially reduces, the presence of any cadmium, indium, and/or antimony, as well as the oxides of tin and lead, leaving a surface that is substantially tin and lead. The resulting treatment renders the solder compatible with mildly reducing fluxes of low activity and improves the wettability of the solder.

Abstract: The fatigue resistance of lead-tin eutectic solder is increased by doping the solder with about 0.1 to 0.8 weight % of a dopant selected from cadmium, indium antimony and mixtures thereof. The doped eutectic solder exhibits increased resistance to thermally or mechanically induced cyclic stress and strain. As a result, the fatigue resistance of the solder joint is increased. Combination of dopants, such as indium and cadmium, in combined amounts of less than 0.5 weight % are especially effective in increasing the fatigue resistance of the lead-tin eutectic solder.

Abstract: Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.

Abstract: A PIN amorphous silicon solar cell including a nitrogen compensated intrinsic inter-layer adjacent to the P type layer forming the light receiving face of the cell.

Abstract: A method of preparing electrical contacts and electrical contact materials comprises the steps of blending a conductive metallic component, such as silver, with nickel and zirconium diboride which is substantially completely free of oxides, pressing the powder mixture to form a pre-sintered compact, and thereafter liquid phase sintering the compact to a densified body.The zirconium diboride is mixed with about 2 weight percent of a reducing agent, preferably mixed carbon and boron powders, and heated to remove oxides from the surface of the zirconium diboride powder particles prior to the steps of pressing and sintering.