Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer and including a contact area hole corresponding to the first independent platform, coated onto the metal layer at the protective layer and coupled to the first independent platform, and extended to the second independent platform to form a pad for wire bonding the first independent platform. The independent platforms define the second independent platform for wire bonding, and its capacitance is modulated to provide a stronger wire bonding strength, and the dielectric layer filled at the external sides of the two platforms lowers the wire connected metal capacitance and obtain a planarized surface for producing the metal layer easily.