Patents by Inventor Bor-Ren Fang

Bor-Ren Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8138494
    Abstract: The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: March 20, 2012
    Assignee: Chang Gung University
    Inventors: Ray-Ming Lin, Jhong-Hao Jiang, Bor-Ren Fang
  • Publication number: 20110180778
    Abstract: The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
    Type: Application
    Filed: January 27, 2010
    Publication date: July 28, 2011
    Applicant: CHANG GUNG UNIVERSITY
    Inventors: Ray-Ming Lin, Jhong-Hao Jiang, Bor-Ren Fang
  • Patent number: 6548159
    Abstract: An epoxy/clay nanocomposite suitable for use as matrix material for printed circuit boards is disclosed. The nanocomposite of the present invention comprises a layered clay material uniformly dispersed in an epoxy polymer matrix, wherein the clay material has been modified to an organoclay by ion exchange with (1) benzalkonium chloride and (2) dicyandiamide or tetraethylenepentamine. The epoxy/clay nanocomposites of the present invention have superior dimensional and thermal stability, and a lower hygroscopic property. The invention also includes the prepregs or circuit boards containing the epoxy/clay nanocomposite.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: April 15, 2003
    Assignees: Industrial Technology Research Institute, Nan Ya Plastics Corporation
    Inventors: Tsung-Yen Tsai, Sung-Jeng Jong, An-Chi Yeh, Joshua Chiang, Bor-Ren Fang
  • Publication number: 20030039812
    Abstract: An epoxy/clay nanocomposite suitable for use as matrix material for printed circuit boards is disclosed. The nanocomposite of the present invention comprises a layered clay material uniformly dispersed in an epoxy polymer matrix, wherein the clay material has been modified to an organoclay by ion exchange with (1) benzalkonium chloride and (2) dicyandiamide or tetraethylenepentamine. The epoxy/clay nanocomposites of the present invention have superior dimensional and thermal stability, and a lower hygroscopic property. The invention also includes the prepregs or circuit boards containing the epoxy/clay nanocomposite.
    Type: Application
    Filed: November 13, 2001
    Publication date: February 27, 2003
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, NAN YA PLASTICS CORPORATION
    Inventors: Tsung-Yen Tsai, Sung-Jeng Jong, An-Chi Yeh, Joshua Chiang, Bor-Ren Fang