Abstract: A photovoltaic structure for absorption from the solar spectrum, includes a light transmitting substrate layer, a transparent electrode layer on the substrate layer, a direct band-gap, wide band-gap, nanocrystalline or microcrystalline, think film semiconducting first layer on the transparent electrode layer, a second think film layer comprising a narrow band-gap semiconductor on the first layer a second electrode layer on the second think film layer, and a protective layer on the second electrode layer. The structure has a hetero-structure at the boundary between the wide-band-gap layer and the second thin film layer. The second layer can be chalcogenide salt having an average thickness of 0.4 to 1.2 ?m, and preferably an average thickness of 0.5 to 0.6 ?m. The chalcogenide salt layer is a lead chalcogenide, such as a nanocrystaline lead sulfide, nanocrystalline lead selenide, or a nanocrystalline lead telluride.

Abstract: Certain exemplary embodiments can provide a method, which comprises causing a determination to be made that a body fluid sample is from a patient with cancer. The determination can be made via analyzing the body fluid sample by sub-THz resonance spectroscopy with absorption determinations being made at a plurality of frequencies between 0.05 and 1.0 THz to show a presence of specific Micro-RNAs as cancer related molecules in the body fluid.

Abstract: Certain exemplary embodiments can provide a method, which comprises causing a determination to be made that a body fluid sample is from a patient with cancer. The determination can be made via analyzing the body fluid sample by sub-THz resonance spectroscopy with absorption determinations being made at a plurality of frequencies between 0.05 and 1.0 THz to show a presence of specific Micro-RNAs as cancer related molecules in the body fluid.

Abstract: Biological cells or spores are analyzed by using enhanced THz coupling to molecules by depositing a test material in a channel of a microfluidic chip using near field sensing of sub-THz radiation from the molecules. The THz radiation is enhanced by transmitting THz radiation through slots in the chip, illuminating molecules of the test material with the enhanced THz radiation transmitted through the slots. A spectroscopic signature of the test material is generated, and a database of signatures of materials is generated. The test material is identified by comparing the signature of the test material with signatures of materials in the database.

Abstract: Biological cells or spores are analyzed by using enhanced THz coupling to molecules by depositing a test material in a channel of a microfluidic chip using near field sensing of sub-THz radiation from the molecules. The THz radiation is enhanced by transmitting THz radiation through slots in the chip, illuminating molecules of the test material with the enhanced THz radiation transmitted through the slots. A spectroscopic signature of the test material is generated, and a database of signatures of materials is generated. The test material is identified by comparing the signature of the test material with signatures of materials in the database.

Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Abstract: A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.