Abstract: A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.

Abstract: Disclosed are a light-emitting diode (LED) device, a manufacturing method thereof, and a display panel. The LED device includes a base substrate, a first electrode layer, an electron transport layer, a quantum dot light-emitting layer and a second electrode layer. The first electrode layer is laminated on the base substrate; the electron transport layer is laminated on a surface of the first electrode layer away from the base substrate; the quantum dot light-emitting layer is laminated on a surface of the electron transport layer away from the first electrode layer; the second electrode layer is laminated on the surface of the quantum dot light-emitting layer away from the electron transport layer; wherein the surface of the electron transport layer away from the first electrode layer is a first concave-convex surface including a plurality of protrusions.

Abstract: Disclosed are an array substrate, a display panel and a display device. The array substrate includes: a base substrate, electroluminescent devices located on the base substrates, and a reflection structure located on the side away from light exiting surfaces of the electroluminescent devices, where the reflection structure includes at least two groups of Bragg reflectors configured to reflect visible light in preset wave bands, the preset wave bands reflected by the different groups of Bragg reflectors are different, the various preset wave bands do not completely overlap, wavelength ranges of light emitted by the electroluminescent devices overlap with wavelength ranges of light reflected by the Bragg reflectors corresponding to the electroluminescent devices.

Abstract: A quantum dot electroluminescent element, a display panel, and a display device are provided. The quantum dot electroluminescent element includes an anode layer, a composite light-emitting layer, and a cathode layer which are stacked. The composite light-emitting layer includes at least two quantum dot light-emitting layers which are stacked, and an intermediate layer arranged between every two adjacent ones of the at least two quantum dot light-emitting layers; the intermediate layer is configured to transport holes and block electrons.

Abstract: The present disclosure is related to a method of manufacturing a light-emitting layer. The method of manufacturing a light-emitting layer may include forming a layer of metal first halide perovskite on a substrate, forming a first pattern comprising metal second halide perovskite in the layer of metal first halide perovskite, and forming a second pattern comprising metal third halide perovskite in the layer of metal first halide perovskite.

Abstract: Provided are an OLED display substrate (100) and an OLED display device, in the field of display device. The OLED display substrate (100) includes a plurality of pixels, and each of the pixels includes two sub-pixels. The two sub-pixels include a first sub-pixel (210) and a second sub-pixel (220). The first sub-pixel (210) includes a first light-emitting unit (211) and a second light-emitting unit (212) that are stacked; the second sub-pixel (220) includes a third light-emitting unit (213); and the first light-emitting unit (211), the second light-emitting unit (212) and the third light-emitting unit (213) are configured to emit lights with different colors. Under the same resolution, the aperture ratio of the OLED display substrate (100) may be increased. Alternatively, under the same size of sub-pixels, the resolution of the OLED display substrate (100) may be increased. Therefore, the brightness uniformity and display effect of the OLED display panel are improved.

Abstract: The present disclosure provides a quantum-dot display substrate, a method for preparing the same, and a display device. The quantum dot display substrate includes a first electrode, a second electrode, and a quantum-dot-emitting layer located between the first electrode and the second electrode, and the quantum-dot-emitting layer includes: a DNA single-stranded structure of a specific pattern, with quantum dots attached to the DNA single-stranded structure.

Abstract: The present disclosure is related to a method of manufacturing a light-emitting layer. The method of manufacturing a light-emitting layer may include forming a layer of metal first halide perovskite on a substrate, forming a first pattern comprising metal second halide perovskite in the layer of metal first halide perovskite, and forming a second pattern comprising metal third halide perovskite in the layer of metal first halide perovskite.

Abstract: A display panel includes a substrate, a first electrode, a light-emitting layer, a second electrode, and one or more refractive film layers. The first electrode, the light-emitting layer, and the second electrode are sequentially disposed over the substrate. The substrate, the first electrode, and the one or more refractive film layers are configured to provide a stepwise graded refractive index along a transmission direction of lights emitted from the light-emitting layer and transmitted therethrough to thereby cause an improved outcoupling of the lights. The one or more refractive film layers may optionally include a first refractive film layer disposed on a surface of the substrate proximate to the first electrode, and may optionally include a second refractive film layer disposed on a surface of the substrate distal to the first electrode.

Abstract: A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.

Abstract: Provided are an OLED display substrate (100) and an OLED display device, in the field of display device. The OLED display substrate (100) includes a plurality of pixels, and each of the pixels includes two sub-pixels. The two sub-pixels include a first sub-pixel (210) and a second sub-pixel (220). The first sub-pixel (210) includes a first light-emitting unit (211) and a second light-emitting unit (212) that are stacked; the second sub-pixel (220) includes a third light-emitting unit (213); and the first light-emitting unit (211), the second light-emitting unit (212) and the third light-emitting unit (213) are configured to emit lights with different colors. Under the same resolution, the aperture ratio of the OLED display substrate (100) may be increased. Alternatively, under the same size of sub-pixels, the resolution of the OLED display substrate (100) may be increased. Therefore, the brightness uniformity and display effect of the OLED display panel are improved.

Abstract: A display panel includes a substrate, a first electrode, a light-emitting layer, a second electrode, and one or more refractive film layers. The first electrode, the light-emitting layer, and the second electrode are sequentially disposed over the substrate. The substrate, the first electrode, and the one or more refractive film layers are configured to provide a stepwise graded refractive index along a transmission direction of lights emitted from the light-emitting layer and transmitted therethrough to thereby cause an improved outcoupling of the lights. The one or more refractive film layers may optionally include a first refractive film layer disposed on a surface of the substrate proximate to the first electrode, and may optionally include a second refractive film layer disposed on a surface of the substrate distal to the first electrode.

Abstract: A quantum dot electroluminescent element, a display panel, and a display device are provided. The quantum dot electroluminescent element includes an anode layer, a composite light-emitting layer, and a cathode layer which are stacked. The composite light-emitting layer includes at least two quantum dot light-emitting layers which are stacked, and an intermediate layer arranged between every two adjacent ones of the at least two quantum dot light-emitting layers; the intermediate layer is configured to transport holes and block electrons.

Abstract: The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.

Abstract: A transfer template, a display substrate, a display panel, and a method for manufacturing the same are provided in the embodiments of the disclosure, the transfer template being configured to transfer a material to be transferred, including: a transfer substrate; and a plurality of transfer units arranged on the transfer substrate and spaced apart from one another; an adhesive force between the plurality of transfer units and the material to be transferred is configured to be larger than another adhesive force between the transfer substrate and the material to be transferred.

Abstract: Disclosed are an array substrate, a display panel and a display device. The array substrate includes: a base substrate, electroluminescent devices located on the base substrates, and a reflection structure located on the side away from light exiting surfaces of the electroluminescent devices, where the reflection structure includes at least two groups of Bragg reflectors configured to reflect visible light in preset wave bands, the preset wave bands reflected by the different groups of Bragg reflectors are different, the various preset wave bands do not completely overlap, wavelength ranges of light emitted by the electroluminescent devices overlap with wavelength ranges of light reflected by the Bragg reflectors corresponding to the electroluminescent devices.

Abstract: A light emitting diode, a manufacturing method thereof and a display device are provided. The light emitting diode includes a first electrode, an active layer and a second electrode. The active layer is on the first electrode; the second electrode is on a side of the active layer away from the first electrode, and includes a first conductive layer and a second conductive layer sequentially arranged along a direction away from the active layer; the first conductive layer includes a plurality of micropores; and the second conductive layer includes a plurality of conductive nanoparticles.

Abstract: An OLED array substrate includes a plurality of pixel structure, including a plurality of pixel units, each of the plurality of pixel units including: a base substrate; a first electrode disposed above the base substrate; a light emitting layer disposed on a side of the first electrode facing away from the base substrate; a second functional layer disposed on a side of the light emitting layer facing away from the base substrate, wherein the second functional layer wraps the light emitting layer.

Abstract: The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.

Abstract: A light emitting diode, a manufacturing method thereof and a display device are provided. The light emitting diode includes a first electrode, an active layer and a second electrode. The active layer is on the first electrode; the second electrode is on a side of the active layer away from the first electrode, and includes a first conductive layer and a second conductive layer sequentially arranged along a direction away from the active layer; the first conductive layer includes a plurality of micropores; and the second conductive layer includes a plurality of conductive nanoparticles.