Abstract: A combined magnetic and bioabsorbable device for ventral hernia closure and/or tension distribution for maintenance of tissue apposition for healing, while avoiding a long-term footprint of foreign material and precluding materials spanning the interior layer of the abdominal closure where risk to visceral structures exists.

Abstract: A bandanna is provided that includes a generally square piece of material defining a first, second, third, and fourth corner. A first diametric axis bisects the first and second corners and a second diametric axis bisects the third and fourth corners. The material defines a first pair of diametrically opposed openings respectively at the first and second corner. The material is configured to be folded about the second diametric axis into a triangle to align the openings of the first pair of openings. The material is configured to interconnect at least one of the third and fourth corners with the first and second corners through the first pair of openings. The openings may be formed as elongated slits, which may extend along or parallel to the first diametric axis. The material may have at least one region for displaying indicia, including at least one of sports related graphics, non-sports related graphics, and corporate logos.

Abstract: A bandanna is provided that includes a generally square piece of material defining a first, second, third, and fourth corner. A first diametric axis bisects the first and second corners and a second diametric axis bisects the third and fourth corners. The material defines a first pair of diametrically opposed openings respectively at the first and second corner. The material is configured to be folded about the second diametric axis into a triangle to align the openings of the first pair of openings. The material is configured to interconnect at least one of the third and fourth corners with the first and second corners through the first pair of openings. The openings may be formed as elongated slits, which may extend along or parallel to the first diametric axis. The material may have at least one region for displaying indicia, including at least one of sports related graphics, non-sports related graphics, and corporate logos.

Abstract: Various biopsy devices configured to biopsy tissue from a body cavity and methods of use are provided. In an exemplary embodiment, a biopsy sleeve is provided with an elongate shaft having distal and proximal ends. The elongate shaft is configured to receive at least a portion of an imaging device therein, and an engagement member is disposed on the proximal end and configured to engage with the imaging device. A biopsy collector is engageable with the elongate shaft and is configured to collect tissue for a biopsy sample. At least part of the distal end of the elongate shaft is configured to allow visualization therethrough using the imaging device such that a user can visualize the tissue being collected.

Abstract: Various biopsy devices configured to biopsy tissue from a body cavity and methods of use are provided. In an exemplary embodiment, a biopsy sleeve is provided with an elongate shaft having distal and proximal ends. The elongate shaft is configured to receive at least a portion of an imaging device therein, and an engagement member is disposed on the proximal end and configured to engage with the imaging device. A biopsy collector is engageable with the elongate shaft and is configured to collect tissue for a biopsy sample. At least part of the distal end of the elongate shaft is configured to allow visualization therethrough using the imaging device such that a user can visualize the tissue being collected.

Abstract: A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate.

Abstract: A bandanna is provided that includes a generally square piece of material defining a first, second, third, and fourth corner. A first diametric axis bisects the first and second corners and a second diametric axis bisects the third and fourth corners. The material defines a first pair of diametrically opposed openings respectively at the first and second corner. The material is configured to be folded about the second diametric axis into a triangle to align the openings of the first pair of openings. The material is configured to interconnect at least one of the third and fourth corners with the first and second corners through the first pair of openings. The openings may be formed as elongated slits, which may extend along or parallel to the first diametric axis. The material may have at least one region for displaying indicia, including at least one of sports related graphics, non-sports related graphics, and corporate logos.

Abstract: A method for selectively etching a tungsten layer on a substrate includes arranging a substrate including a tungsten layer on a substrate support. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device arranged between the upper and lower chamber regions. The gas dispersion device includes a plurality of holes in fluid communication with the upper and lower chamber regions. The method further includes controlling pressure in the substrate processing chamber in a range from 0.4 Torr to 10 Torr; supplying an etch gas mixture including fluorine-based gas to the upper chamber region; striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil; and selectively etching the tungsten layer relative to at least one other film material of the substrate.