Patents by Inventor Bradley Alan Orner

Bradley Alan Orner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8421478
    Abstract: Radio frequency integrated circuits with on-chip noise source for use in the performance of tests and/or calibrations. A radio frequency integrated circuit includes at least one noise source residing on the radio frequency integrated circuit, the noise source being controllable by a digital input, and a radio frequency circuit residing on the radio frequency integrated circuit and being coupled to the noise source, wherein at least one attribute of the radio frequency circuit is determinable by controlling the noise source via the digital input.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: April 16, 2013
    Assignee: International Business Machines Corporation
    Inventors: Brian Allan Floyd, David Ross Greenberg, Ramana Murty Malladi, Bradley Alan Orner, Scott Kevin Reynolds
  • Publication number: 20090190640
    Abstract: Radio frequency integrated circuits with on-chip noise source for use in the performance of tests and/or calibrations. For example, a radio frequency integrated circuit comprises at least one noise source residing on the radio frequency integrated circuit, the noise source being controllable by a digital input, and a radio frequency circuit residing on the radio frequency integrated circuit and being coupled to the noise source, wherein at least one attribute of the radio frequency circuit is determinable by controlling the noise source via the digital input.
    Type: Application
    Filed: January 25, 2008
    Publication date: July 30, 2009
    Inventors: Brian Allan Floyd, David Ross Greenberg, Ramana Murty Malladi, Bradley Alan Orner, Scott Kevin Reynolds
  • Patent number: 7381997
    Abstract: A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.
    Type: Grant
    Filed: November 26, 2007
    Date of Patent: June 3, 2008
    Assignee: International Business Machines Corporation
    Inventors: Douglas Duane Coolbaugh, Jeffrey Bowman Johnson, Xuefeng Liu, Bradley Alan Orner, Robert Mark Rassel, David Charles Sheridan
  • Patent number: 7335927
    Abstract: A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.
    Type: Grant
    Filed: January 30, 2006
    Date of Patent: February 26, 2008
    Assignee: Internatioanl Business Machines Corporation
    Inventors: Douglas Duane Coolbaugh, Jeffrey Bowman Johnson, Xuefeng Liu, Bradley Alan Orner, Robert Mark Rassel, David Charles Sheridan
  • Publication number: 20070176252
    Abstract: A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.
    Type: Application
    Filed: January 30, 2006
    Publication date: August 2, 2007
    Inventors: Douglas Duane Coolbaugh, Jeffrey Bowman Johnson, Xuefeng Liu, Bradley Alan Orner, Robert Mark Rassel, David Charles Sheridan