Abstract: A touch sensitive film (1) includes a conductive layer (2) having a touch sensing region (3), and a user input surface (4). The user input surface of the touch sensitive film includes a tactilely distinguishable surface feature (5) deviating from the general nature of the user input surface (4) for identifying the location of the touch sensing region (3) by sensing the tactilely distinguishable surface feature.

Abstract: A capacitive touch sensitive film comprises a conductive layer having a sensing region. According to the present invention, the sheet resistance of the conductive layer in the sensing region is higher than or equal to 3 k?.

Abstract: A structure comprising high aspect ratio molecular structures (HARM-structures), wherein the structure comprises an essentially planar network (2) of HARM-structures, and a support (3) in contact with the network (2). The support (3) has an opening (5) therein, at the peripheral region (4) of which opening (5) the network (2) is in contact with the support (3), such that the middle part of the network (2) is unsupported by the support (3). The network (2) comprises essentially randomly oriented HARM-structures.

Abstract: A touch screen (13) on a display device (1), and a method for manufacturing a touch screen (13) on a display device (1). The display device (1) has an upper substrate (12) for protecting the display device (1) from the environment, the touch screen (13) comprising an electrically conductive transparent first layer (16). The first layer (16) comprises a network of electrically conductive high aspect ratio molecular structures (HARM-structures), the first layer (16) being embedded into the upper substrate (12) of the display device (1) to protect the conductive transparent first layer (16), for reducing the optical thickness of the structure between a viewer and the region of the display device (1) in which the image is formed.

Abstract: A touch sensor having a touch sensitive film, a signal filter, electrical circuitry and a processing unit. The film is capable of capacitive or inductive coupling to an external object when a touch is made by the object. The signal filter is formed by the resistance of the film and the capacitive or inductive coupling to the external object, and the filter has properties affected by location of the touch and/or capacitance or inductance of the touch. The electrical circuitry is coupled to the touch sensitive film and configured to supply excitation, amplitude and wave form into the signal filter and to receive response signals from the signal filter. The processing unit is configured to detect the presence or proximity of a touch, the location of said touch, the capacitance and/or inductance of said touch by processing response signals and thereby measuring changes in the properties of the signal filter.

Abstract: A touch sensitive film (1) includes a conductive layer (2) having a touch sensing region (3), and a user input surface (4). The user input surface of the touch sensitive film includes a tactilely distinguishable surface feature (5) deviating from the general nature of the user input surface (4) for identifying the location of the touch sensing region (3) by sensing the tactilely distinguishable surface feature.

Abstract: A carbon nanobud molecule (3, 9, 18, 23, 29, 36) having at least one fullerene part covalently bonded to the side of a tubular carbon molecule is used to interact with electromagnetic radiation in a device, wherein the interaction with electromagnetic radiation occurs through relaxation and/or excitation of the carbon nanobud molecule.

Abstract: A capacitive touch sensitive film comprises a conductive layer having a sensing region. According to the present invention, the sheet resistance of the conductive layer in the sensing region is higher than or equal to 3 k?.

Abstract: A touch screen (13) on a display device (1), and a method for manufacturing a touch screen (13) on a display device (1). The display device (1)has an upper substrate (12) for protecting the display device (1) from the environment, the touch screen (13) comprising an electrically conductive transparent first layer (16). The first layer (16) comprises a network of electrically conductive high aspect ratio molecular structures (HARM-structures), the first layer (16) being embedded into the upper substrate (12) of the display device (1)to protect the conductive transparent first layer (16), for reducing the optical thickness of the structure between a viewer and the region of the display device (1) in which the image is formed.

Abstract: A structure comprising high aspect ratio molecular structures (HARM-structures), wherein the structure comprises an essentially planar network (2) of HARM-structures, and a support (3) in contact with the network (2). The support (3) has an opening (5) therein, at the peripheral region (4) of which opening (5) the network (2) is in contact with the support (3), such that the middle part of the network (2) is unsupported by the support (3). The network (2) comprises essentially randomly oriented HARM-structures.

Abstract: A carbon nanobud molecule (3, 9, 18, 23, 29, 36) having at least one fullerene part covalently bonded to the side of a tubular carbon molecule is used to interact with electromagnetic radiation in a device, wherein the interaction with electromagnetic radiation occurs through relaxation and/or excitation of the carbon nanobud molecule.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Abstract: A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.

Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.

Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Abstract: A dielectric structure formed on a substrate using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material, such as Al2O3, HfO2, or ZrO2, for example, in combination with niobium oxide (Nb2O5). The Nb2O5 is either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material or as one or more separate layers in addition to the layer or layers of current leakage inhibiting material. The dielectric structure may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes are formed around the dielectric structure in the same ALD processing system. One or more of the electrodes may comprise a transition metal nitride, a noble metal, or a noble metal alloy.