Patents by Inventor Bradley Scott Hersch

Bradley Scott Hersch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of matching two or more plasma reactors
    Patent number: 9305748
    Abstract: Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: April 5, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gaurav Saraf, Xiawan Yang, Farid Abooameri, Wen Teh Chang, Anisul H. Khan, Bradley Scott Hersch
  • Predictive method of matching two plasma reactors
    Patent number: 9184021
    Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: November 10, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Gaurav Saraf, Xiawan Yang, Farid Abooameri, Wen Teh Chang, Anisul H. Khan, Bradley Scott Hersch
  • METHOD OF MATCHING TWO OR MORE PLASMA REACTORS
    Publication number: 20150096959
    Abstract: Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.
    Type: Application
    Filed: October 28, 2013
    Publication date: April 9, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Gaurav Saraf, Xiawan Yang, Farid Abooameri, Wen Teh Chang, Anisul H Khan, Bradley Scott Hersch
  • PREDICTIVE METHOD OF MATCHING TWO PLASMA REACTORS
    Publication number: 20150099314
    Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.
    Type: Application
    Filed: October 28, 2013
    Publication date: April 9, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Gaurav Saraf, Xiawan Yang, Farid Abooameri, Wen Teh Chang, Anisul H. Khan, Bradley Scott Hersch