Abstract: Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may a die having a front side and a back side, the die comprising a first material and conductive contacts at the front side; and a thermal layer attached to the back side of the die, the thermal layer comprising a second material and a conductive pathway, wherein the conductive pathway extends from a front side of the thermal layer to a back side of the thermal layer.

Abstract: In microelectronic applications, it is often desired to deposit and pattern a permanent dielectric film in order to electrically and mechanically isolate components. Photo-patternable dielectrics are attractive for these uses because of their reduced time and cost requirements. These permanent dielectrics should be high-speed, positive-tone, and aqueous-developable. This type of patternability may be achieved by using a chemically amplified deprotection reaction of tert-butoxycarbonate or tert-butyl acrylate catalyzed by a photo-inducible acid.

Abstract: In microelectronic applications, it is often desired to deposit and pattern a permanent dielectric film in order to electrically and mechanically isolate components. Photo-patternable dielectrics are attractive for these uses because of their reduced time and cost requirements. These permanent dielectrics should be high-speed, positive-tone, and aqueous-developable. This type of patternability may be achieved by using a chemically amplified deprotection reaction of tert-butoxycarbonate or tert-butyl acrylate catalyzed by a photo-inducible acid.