Abstract: A semiconductor device may include a semiconductor layer having a first conductivity type, a well region of a second conductivity type in the semiconductor layer wherein the first and second conductivity types are different, and a terminal region of the first conductivity type in the well region. An epitaxial semiconductor layer may be on the surface of the semiconductor layer including the well region and the terminal region with the epitaxial semiconductor layer having the first conductivity type across the well and terminal regions. A gate electrode may be on the epitaxial semiconductor layer so that the epitaxial semiconductor layer is between the gate electrode and portions of the well region surrounding the terminal region at the surface of the semiconductor layer.

Abstract: A semiconductor device may include a semiconductor layer having a first conductivity type, a well region of a second conductivity type in the semiconductor layer wherein the first and second conductivity types are different, and a terminal region of the first conductivity type in the well region. An epitaxial semiconductor layer may be on the surface of the semiconductor layer including the well region and the terminal region with the epitaxial semiconductor layer having the first conductivity type across the well and terminal regions. A gate electrode may be on the epitaxial semiconductor layer so that the epitaxial semiconductor layer is between the gate electrode and portions of the well region surrounding the terminal region at the surface of the semiconductor layer.

Abstract: A semiconductor device may include an insulating layer and a semiconductor electrode on the insulating layer. An area of increased electrical resistance may separate a contact area of the semiconductor electrode from an active area of the semiconductor electrode. In addition, a metal contact may be provided on the contact area of the semiconductor electrode opposite the insulating layer.

Abstract: A method of forming a semiconductor device may include forming a terminal region of a first conductivity type within a semiconductor layer of the first conductivity type. A well region of a second conductivity type may be formed within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, a depth of the well region into the semiconductor layer may be greater than a depth of the terminal region into the semiconductor layer, and the first and second conductivity types may be different. An epitaxial semiconductor layer may be formed on the semiconductor layer, and a terminal contact region of the first conductivity type may be formed in the epitaxial semiconductor layer with the terminal contact region providing electrical contact with the terminal region. In addition, an ohmic contact may be formed on the terminal contact region. Related structures are also discussed.

Abstract: A semiconductor device may include an insulating layer and a semiconductor electrode on the insulating layer. An area of increased electrical resistance may separate a contact area of the semiconductor electrode from an active area of the semiconductor electrode. In addition, a metal contact may be provided on the contact area of the semiconductor electrode opposite the insulating layer.

Abstract: A method of forming a semiconductor device may include forming a terminal region of a first conductivity type within a semiconductor layer of the first conductivity type. A well region of a second conductivity type may be formed within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, a depth of the well region into the semiconductor layer may be greater than a depth of the terminal region into the semiconductor layer, and the first and second conductivity types may be different. An epitaxial semiconductor layer may be formed on the semiconductor layer, and a terminal contact region of the first conductivity type may be formed in the epitaxial semiconductor layer with the terminal contact region providing electrical contact with the terminal region. In addition, an ohmic contact may be formed on the terminal contact region. Related structures are also discussed.