Abstract: A system for generating a user-adjustable furnace profile, comprises a user interface configured to receive one or more materials properties from a user, a processor, and a memory with computer code instructions stored thereon. The memory is operatively coupled to the processor such that, when executed by the processor, the computer code instructions cause the system to implement communicating with a furnace to ascertain one or more thermal processes associated with the furnace, identifying one or more object characteristics associated with an object to be processed by furnace, and determining a thermal processing parameter profile of at least one thermal processing parameter corresponding to each of the thermal processes, based on (i) the one or more part characteristics and (ii) the one or more materials properties, the thermal processing parameter profile characterizing a cycle of the one or more thermal processes.

Abstract: Embodiments of the present disclosure are drawn to systems and methods for adjusting a three-dimensional (3D) model used in metal additive manufacturing to maintain dimensional accuracy and repeatability of a fabricated 3D part. These embodiments may be used to reduce or remove geometric distortions in the fabricated 3D part. One exemplary method may include: receiving, via one or more processors, a selection made by a user; receiving a 3D model of a desired part; retrieving at least one model constant based on the user's selection; receiving an input of at least one process variable setting from a set of process variable settings; generating transformation factors based on the at least one process variable parameter and the at least one model constant; transforming the 3D model of the desired part based on the transformation factors; and generating processing instructions for fabricating the transformed 3D model of the desired part.

Abstract: A system for generating a user-adjustable furnace profile, comprises a user interface configured to receive one or more materials properties from a user, a processor, and a memory with computer code instructions stored thereon. The memory is operatively coupled to the processor such that, when executed by the processor, the computer code instructions cause the system to implement communicating with a furnace to ascertain one or more thermal processes associated with the furnace, identifying one or more object characteristics associated with an object to be processed by furnace, and determining a thermal processing parameter profile of at least one thermal processing parameter corresponding to each of the thermal processes, based on (i) the one or more part characteristics and (ii) the one or more materials properties, the thermal processing parameter profile characterizing a cycle of the one or more thermal processes.

Abstract: Embodiments described herein relate to methods and systems for controlling the packing behavior of powders for additive manufacturing applications. In some embodiments, a method for additive manufacturing includes adding a packing modifier to a base powder to form a build material. The build material may be spread to form a layer across a powder bed, and the build material may be selectively joined along a two-dimensional pattern associated with the layer. The steps of spreading a layer of build material and selectively joining the build material in the layer may be repeated to form a three-dimensional object. The packing modifier may be selected to enhance one or more powder packing and/or powder flow characteristics of the base powder to provide for improved uniformity of the additive manufacturing process, promote sintering, and/or to enhance the properties of the manufactured three-dimensional objects.

Abstract: A system for generating a user-adjustable furnace profile, comprises a user interface configured to receive one or more materials properties from a user, a processor, and a memory with computer code instructions stored thereon. The memory is operatively coupled to the processor such that, when executed by the processor, the computer code instructions cause the system to implement communicating with a furnace to ascertain one or more thermal processes associated with the furnace, identifying one or more object characteristics associated with an object to be processed by furnace, and determining a thermal processing parameter profile of at least one thermal processing parameter corresponding to each of the thermal processes, based on (i) the one or more part characteristics and (ii) the one or more materials properties, the thermal processing parameter profile characterizing a cycle of the one or more thermal processes.

Abstract: Techniques for debinding additively fabricated parts are described that do not require solvent debinding or catalytic debinding, and that may be performed using only thermal debinding in a furnace. As a result, in at least some cases debinding and sintering may take place sequentially within a single furnace. In some embodiments, the techniques may utilize particular materials as binders that allow for a thermal debinding process that does not negatively affect the parts.

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.

Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.

Abstract: A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.

Abstract: A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent “MPD” in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 vol %) so that flow can be maintained without choke off from diffusional solidification.

Abstract: In a process for producing powder metallurgy objects containing two or more individually formed pieces, the individual formed pieces or powder compacts which are comprised of powder and a binder are joined together. A polymer compatible with the binder is sandwiched between two such powder compacts. A lamination joint is formed. The polymer is then softened, and a resultant aggregate body is thermally processed to remove the binder and polymer. The resulting object has no residual interface between the original individually formed pieces. There is no discernable boundary at the lamination joint. The final part is homogeneous and uniform with no foreign material or structural imperfections at the joint.