Abstract: Filled silicone composition, in situ preparation and use thereof are provided. The composition comprises a mixture of (A) an in situ-prepared treated silica, (B) an in situ-prepared (siloxane-alkylene)-endblocked polydiorganosiloxane, (c) a cure catalyst and (D) a crosslinker. Moreover, the composition can be used as adhesive, coating and sealant.

Abstract: Filled silicone composition, in situ preparation and use thereof are provided. The composition comprises a mixture of (A) an in situ-prepared treated silica, (B) an in situ-prepared (siloxane-alkylene)-endblocked polydiorganosiloxane, (c) a cure catalyst and (D) a crosslinker. Moreover, the composition can be used as adhesive, coating and sealant.

Abstract: A method includes the steps of (I) fabricating a cured silicone product and (II) using the cured silicone product in a patterning technique. The cured silicone product is a reaction product of (A) a silicone cure package and (B) is a polar additive having a polyalkylene oxide functionality and a reactive functionality. The method is useful in soft lithography applications.

Abstract: A method for temporary wafer bonding employs a curable adhesive composition and a degradation agent combined with the curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a base. The film prepared by curing the composition is degradable and removable by heating.

Abstract: A method for temporary wafer bonding employs a curable adhesive composition and a degradation agent combined with the curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a base. The film prepared by curing the composition is degradable and removable by heating.

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Abstract: A composition includes: (I) an alkenyl functional, phenyl-containing polyorganosiloxane, an Si—H functional phenyl-containing polyorganosiloxane, or a combination thereof; (II) a hydrogendiorganosiloxy terminated oligodiphenylsiloxane having specific molecular weight, an alkenyl-functional, diorganosiloxy-terminated oligodiphenylsiloxane having specific molecular weight, or a combination thereof; and (III) a hydrosilylation catalyst. A light emitting device is made by applying the composition onto a light source followed by curing. The composition provides a cured material with mechanical properties suited for use as an encapsulant for a light emitting device.

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Abstract: A composition includes: (I) an alkenyl functional, phenyl-containing polyorganosiloxane, an Si—H functional phenyl-containing polyorganosiloxane, or a combination thereof; (II) a hydrogendiorganosiloxy terminated oligodiphenylsiloxane having specific molecular weight, an alkenyl-functional, diorganosiloxy-terminated oligodiphenylsiloxane having specific molecular weight, or a combination thereof; and (III) a hydrosilylation catalyst. A light emitting device is made by applying the composition onto a light source followed by curing. The composition provides a cured material with mechanical properties suited for use as an encapsulant for a light emitting device.

Abstract: A method includes the steps of (I) fabricating a cured silicone product and (II) using the cured silicone product in a patterning technique. The cured silicone product is a reaction product of (A) a silicone cure package and (B) is a polar additive having a polyalkylene oxide functionality and a reactive functionality. The method is useful in soft lithography applications.

Abstract: A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

Abstract: A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.

Abstract: A method for temporary wafer bonding employs an addition reaction curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a solvent. The film prepared by curing the composition is removable with an etching solution.

Abstract: A lithography method includes the steps of: A) filling a mold having a patterned surface with a phase change composition at a temperature above the phase change temperature of the phase change composition; B) hardening the phase change composition to form a patterned feature; C) separating the mold and the patterned feature; optionally D) etching the patterned feature; optionally E) cleaning the mold; and optionally F) repeating steps A) to D) reusing the mold. The PCC may include an organofunctional silicone wax.

Abstract: A method includes the steps of: A) filling a silicone mold having a patterned surface with a curable (meth)acrylate formulation, B) curing the curable (meth)acrylate formulation to form a patterned feature, C) separating the silicone mold and the patterned feature, optionally D) etching the patterned feature, and optionally E) repeating steps A) to D) reusing the silicone mold. The curable (meth)acrylate formulation contains a fluorofunctional (meth)acrylate, a (meth)acrylate, and a photoinitiator.

Abstract: A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the nonexposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer, and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and a base.

Abstract: Silicone resins comprising 5 to 50 mole % of (PhSiO3-x)/2(OH)x) units and 50 to 95 mole % (HSiO(3-x)/2(OH)x), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher. These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher.

Abstract: Silicone resins comprising 5 to 50 mole % of (PhSiO3−x)/2(OH)x) units and 50 to 95 mole % (HSiO(3−x)/2(OH)x), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher. These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher.

Abstract: A method for selective electroless metal deposition on a substrate. The method comprises applying a patterned coating comprising a silyl hydride functional resin onto a substrate. An electroless plating solution comprising a metal ion is then applied onto the silyl hydride functional resin coating to deposit a patterned metal film on the substrate. The process of the invention is especially useful in the electronics industry.

Abstract: A process for which making silicone-filler mixtures which comprises effecting the ring-opening polymerisation of a cyclosiloxane with a phosphazene base in the presence of a filler and of water, preferably from 0.5 mil to 10 mols of water per mol of phosphazene base. The filler is preferably selected from silica, alumina, titanium dioxide, carbon black and calcium carbonate, present in an amount of from 1 to 200 parts by weight per 100 parts by weight of cyclosiloxane. An agent or conditions which inhibit catalyst activity may initially be present (e.g. carbon dioxide or excess water), and polymerisation may be initiated by reducing the effect of the inhibiting agent or conditions (e.g. by heating). Silicon-elastomers produced by curing such silicone polymer-filler mixtures are also claimed.