Patents by Inventor Brian J. Rizzi

Brian J. Rizzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HEMT WITH IMPROVED QUANTUM CONFINEMENT OF ELECTRONS
    Publication number: 20100314610
    Abstract: A HEMT with improved electron confinement is formed by removing semiconductor cap material between the channel and the source and drain regions. The source and drain regions can be isolated from the gate region by an insulating layer. Significant noise reduction can be achieved as a result of these techniques. Also, removing the semiconductor cap material can provide an increased breakdown voltage for the transistor.
    Type: Application
    Filed: April 9, 2010
    Publication date: December 16, 2010
    Inventors: Samson Mil'shtein, Amey V. Churi, Brian J. Rizzi, Peter N. Ersland