Abstract: A system and method for an automatic transfer switch comprising a fixed contact (26), a first oscillating rod (16) communicatively and operatively connected to a first movable contact (25), a second oscillating rod (18) communicatively and operatively connected to a second movable contact (27), a link rod (12) communicatively and operable connected to the first and second oscillating rods (16, 18), a guide plate (20), and a permanent magnetic actuator (2) comprising a first end and a second end communicatively and operatively connected to the link rod (12) via a third oscillating rod (8), wherein the first end being energized independently of the second end. The automatic transfer switch is operable to position the guide plate (20) based at least on a permanent magnetic force applied to the first end or the second end of the permanent magnetic actuator.

Abstract: A system and method for an automatic transfer switch comprising a fixed contact, a first oscillating rod communicatively and operatively connected to a first movable contact, a second oscillating rod communicatively and operatively connected to a second movable contact, a link rod communicatively and operable connected to the first and second oscillating rods, and a guide plate. The automatic transfer switch is operable to position the guide plate based at least on a state of a solenoid. A permanent magnetic actuator communicatively and operatively connected to the link rod via a third oscillating rod is operable to rotate the first oscillating rod or the second oscillating rod based at least on the position of the guide plate.

Abstract: A system and method for an automatic transfer switch comprising a fixed contact (26), a first oscillating rod (16) communicatively and operatively connected to a first movable contact (25), a second oscillating rod (18) communicatively and operatively connected to a second movable contact (27), a link rod (12) communicatively and operable connected to the first and second oscillating rods (16, 18), a guide plate (20), and a permanent magnetic actuator (2) comprising a first end and a second end communicatively and operatively connected to the link rod (12) via a third oscillating rod (8), wherein the first end being energized independently of the second end. The automatic transfer switch is operable to position the guide plate (20) based at least on a permanent magnetic force applied to the first end or the second end of the permanent magnetic actuator.

Abstract: A system and method for an automatic transfer switch comprising a fixed contact, a first oscillating rod communicatively and operatively connected to a first movable contact, a second oscillating rod communicatively and operatively connected to a second movable contact, a link rod communicatively and operable connected to the first and second oscillating rods, and a guide plate. The automatic transfer switch is operable to position the guide plate based at least on a state of a solenoid. A permanent magnetic actuator communicatively and operatively connected to the link rod via a third oscillating rod is operable to rotate the first oscillating rod or the second oscillating rod based at least on the position of the guide plate.

Abstract: A method of measuring variability of integrated circuit components is provided. A specified parameter of at least one first array configuration comprising a plurality of the integrated circuit components without specified internal connections between the integrated circuit components is measured. The specified parameter of at least one second array configuration comprising a plurality of the integrated circuit components nominally identical to those of the first array configuration with specified internal connections between the integrated circuit components is also measured. A variation coefficient is determined for the integrated circuit components based on the measured specified parameter of the at least one first array configuration and the at least one second array configuration.

Abstract: Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed.

Abstract: A non-volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read-write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit-read-write-search-line, and a drain connected to another end of the second phase change material element.

Abstract: The present invention comprises a method and structure for programming an on-chip phase-change resistor to a target resistance. Using an off-chip precision resistor as a reference, a state-machine determines a difference between the resistance of an on-chip resistor and the target resistance. Based upon this difference, the state machine directs a pulse generator to apply set or reset pulses to the on-chip resistor in order to decrease or increase, respectively, the resistance of the resistor, as necessary. In order to program the resistance of the phase-change resistor to a tight tolerance, it is successively reset and set by applying progressively decreasing numbers of reset pulses and set pulses, respectively, until the number of set pulses is equal to one and the target resistance of the on-chip resistor is reached.

Abstract: A programmable, electrically alterable (EA) resistor, an integrated circuit (IC) chip including the EA resistor and integrated analog circuits using on-chip EA resistors. Phase change storage media form resistors (EA resistors) on an IC that may be formed in an array of parallel EA resistors to set variable circuit bias conditions for circuits on the IC and in particular, bias on-chip analog circuits. The bias resistance is changed by changing EA resistor phase. Parallel connection of the parallel EA resistors may be dynamically alterable, switching one or more parallel resistors in and out digitally.

Abstract: A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter.

Abstract: A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.

Abstract: A memory storage system includes a plurality of memory storage banks and a cache in communication therewith. Both the plurality of memory storage banks and the cache further include destructive read memory storage elements configured for delayed write back scheduling thereto.

Abstract: A data transmitter and transmitting method are provided in which an adaptive finite impulse response (FIR) driver has a plurality of taps to which coefficients having updateable values are applied. The FIR driver has a transfer function between an input stream of data bits and an output stream of data bits such that each data bit output from the FIR driver has an amplitude adjusted as a function of the values of a plurality of data bits of the input stream, and the values of the coefficients. The data transmitter includes a rewriteable non-volatile storage, operable to be rewritten with control information representing the values of the coefficients updated during operation of the FIR driver.

Abstract: A content addressable memory (“CAM”) system includes a plurality of segments arranged in an array, wherein each of the plurality of segments includes a plurality of CAM cells, each of the plurality of CAM cells includes a wordline, a matchline and a sinkline, the wordline being shared by all of the cells in the same row, the matchline and sinkline being shared by all of the cells in the same segment; and a corresponding method of searching within a CAM system includes providing an input word to the CAM system, comparing a portion of the input word in a segment of the CAM system, and propagating a mismatch to obviate the need for comparison in other segments of the CAM system.

Abstract: A selectable function is provided that permits the impedance of an output driver or an addressable memory device to be configured without adding extra signal connections. The output driver impedance control function of the invention is achieved through the use of the data bus of a memory array for control. The data lines thus serve two purposes one for normal use and the other for control of the impedance. In the invention, the output impedance of each DRAM in a subassembly array that drives a common data bus is individually separately adjusted.

Abstract: Digital latency shift communication problems from a driver chip to a receiver chip are overcome by scheduling a data output latency, a data input latency, a data output command, and/or a data output command, such that data outputted by the driver chip is received by the receiver chip at the correct time. A digital shift detection circuit detects the offset of the actual latencies from predetermined latencies. The offset of the latency is fed back to the scheduling circuit to override the predetermined latencies and/or command inputs that control the chip. The offset can be directly back-fed to the chip driver or chip receiver to compensate for digital shifts. Digital shift detection is achieved by measuring actual latencies with a manufacturing stand-alone tester, or with a built-in tester integral to the system. The digital shift detection predicts the conditions that create a digital shift by way of a mathematical model.

Abstract: A memory structure comprises a plurality of banks (each of the banks including a plurality of blocks) a plurality of timing critical address lines connected to all of the blocks in respective ones of the banks (a number of the critical address lines being equal to a number of the banks), and a plurality of dedicated address lines connected to respective ones of the blocks.

Abstract: A memory structure comprises a plurality of banks (each of the banks including a plurality of blocks) a plurality of timing critical address lines connected to all of the blocks in respective ones of the banks (a number of the critical address lines being equal to a number of the banks), and a plurality of dedicated address lines connected to respective ones of the blocks.

Abstract: A wordline activation delay monitor circuit is disclosed wherein at least one sample wordline and a sample wordline redundancy are located within the same data-storing array region of a memory, and a sample wordline selector is coupled to activate the sample wordline or sample wordline redundancy based on the state of a nonvolatile input. The wordline selector circuit may include one or both of a row decoder circuit or a wordline driver circuit which have substantially the same structure and location as row decoder circuits and wordline driver circuits used to activate wordlines within the data-storing array region.

Abstract: A shared row decoder and shared row decoding method are disclosed herein which provides separate timed selection signals to each of a first memory unit and a second memory unit. The shared row decoder includes an address input circuit responsive to the states of a plurality of address signals and which provides an enabling or disabling input. In addition, first and second selection circuits are provided which are responsive to enabled conditions of first and second block selection inputs, first and second timing signals, respectively and enabling input of the address input circuit to provide separate timed selection signals to the first and second memory units, respectively.