Abstract: A method and apparatus are provided for initiating test runs based on a fault detection result. The method comprises receiving operational data associated with processing of a workpiece by a processing tool, processing the operational data to determine fault detection results; and causing a test run to be performed based on at least a portion of the fault detection results.

Abstract: A method and apparatus are provided for determining the health of a desired node in a multi-level system. The method includes defining a first fault model associated with a first node of a first level of the system, defining a second fault model associated with a second node of a second level of the system, and defining a third fault model associated with a third node associated with a third level of the system. The method further includes determining a health value associated with at least one of the first node, the second node, and the third node of the system based on at least one of the first fault model, second fault model, and the third fault model.

Abstract: A method and an apparatus for characterizing an uncertainty factor relating to processing workpieces. A first processing step is performed upon a workpiece. A first uncertainty factor associated with the first processing step is calculated. A final uncertainty factor associated with an end-of-line parameter relating to the workpiece is calculated based upon the first uncertainty factor. A process control function based upon the final uncertainty factor is performed.

Abstract: A method and an apparatus are provided for conflict resolution among a plurality of controllers. The method includes receiving a first control instruction from a first process controller to process a workpiece, receiving a second control instruction from a second process controller to process the workpiece and adjusting at least one of the first control instruction and the second control instruction to process the workpiece to achieve a desired process goal.

Abstract: A method and apparatus is provided for fault detection spanning multiple processes. The method comprises receiving operational data associated with a first process, receiving operational data associated with a second process, which is downstream to the first process and performing fault detection analysis based on the operational data associated with the first process and second process using a common fault detection unit.

Abstract: A method includes processing a plurality of workpieces to form at least one feature on each workpiece. A plurality of characteristics of the feature is measured. A covariance matrix including diagonal and non-diagonal terms for the plurality of characteristics measured is constructed. At least the non-diagonal terms of the covariance matrix are monitored. A sampling plan for measuring the workpieces is determined based on the monitoring. A system includes a plurality of tools, at least one metrology tool, and a sampling controller. The tools are configured to process a plurality of workpieces to form at least one feature on each workpiece. The metrology tool is configured to measure a plurality of characteristics of the feature.

Abstract: The present invention is generally directed to an advanced process control of the manufacture of memory devices, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form at least one layer of an oxide-nitride-oxide stack of a memory cell, the stack being comprised of a first layer of oxide positioned above a first layer of polysilicon, a layer of silicon nitride positioned above the first layer of oxide, and a second layer of oxide positioned above the layer of silicon nitride. The method further comprises measuring at least one characteristic of at least one of the first layer of polysilicon, the first oxide layer, the layer of silicon nitride, and the second layer of oxide and adjusting at least one parameter of at least one process operation used to form at least one of the first oxide layer, the layer of silicon nitride and the second oxide layer if the measured at least one characteristic is not within acceptable limits.

Abstract: A method and apparatus is provided for a process control based on an estimated process result. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and estimating at least one process result of the workpiece based on at least a portion of the received trace data. The method further comprises adjusting processing of a next workpiece based on the estimated at least one process result.

Abstract: A method and an apparatus for adjusting a rate of data flow based upon a tool state. A processing step is performed on a workpiece using a processing tool. A dynamic data rate adjustment process is performed to determine a data rate for acquiring data relating to the process performed upon the workpiece. The dynamic data rate adjustment process includes adjusting the data rate based upon an operation parameter relating to the processing tool.

Abstract: The present invention is generally directed to various methods of controlling wafer charging effects due to manufacturing processes, and a system for performing same. In one illustrative embodiment, the method comprises identifying a process metric associated with a process operation that is capable of generating a charge that is stored in at least one of a process layer and a feature formed above a substrate. In other embodiments, the method involves establishing a metric for a plasma-based process operation. The methods include establishing an allowable range for the process metric based upon data obtained from at least one electrical test performed on at least one semiconductor device subjected to the process operation, performing the process operation and indicating an alarm condition if the process metric associated with the process operation is not within the allowable range.

Abstract: A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller.

Abstract: A method and an apparatus are provided for adjusting a sampling rate based on a state estimation result. The method comprises receiving metrology data associated with processing of workpieces, estimating a next process state based on at least a portion of the metrology data and determining an error value associated with the estimated next process state. The method further comprises processing a plurality of workpieces based on the estimated next process state and adjusting a sampling protocol of the processed workpieces that are to be measured based on the determined error value.

Abstract: A method and an apparatus for the determination of a process flow based upon fault detection. A process step upon a workpiece is performed. Fault detection analysis based upon the process step performed upon the workpiece is performed. A workpiece routing process is performed based upon the fault detection analysis. The wafer routing process includes using a controller to perform one or a rework process routing, a non-standard process routing, a fault verification process routing, a normal process routing, or a termination process routing, based upon the fault detection analysis.

Abstract: A wafer fabrication system is presented including a measurement system which screens measurement data prior to dissemination. The measurement system may include an equipment interface computer coupled between a measurement tool and a work-in-process (WIP) server. The measurement tool may perform one of possibly several measurement procedures (i.e., “recipes”) upon one or more semiconductor wafers processed as a lot, thereby producing measurement data. The WIP server may select the measurement recipe and store the measurement data. The equipment interface computer may receive the measurement data produced by the measurement tool and compare the measurement data to a predetermined range of acceptable values in order to determine if the measurement data is within the range of acceptable values. The equipment interface computer may display the measurement data upon a display device such that any portion of the measurement data not within the range of acceptable values is visually flagged (e.g.

Abstract: A method for monitoring the performance of a manufacturing entity is provided. Metrology data indicating an output parameter of the manufacturing entity is retrieved. The output parameter has an associated target value. The metrology data is normalized based on the target value to generate normalized performance data points. A performance rule violation is determined based on the normalized performance data. A manufacturing system includes a metrology tool, a first database, and a processor. The metrology tool is adapted to measure an output parameter of a manufacturing entity to generate metrology data. The output parameter has an associated target value. The first database is adapted to receive the metrology data. The processor is adapted to retrieve the metrology data from the database, normalize the metrology data based on the target value to generate normalized performance data points, and determine a performance rule violation based on the normalized performance data.