Patents by Inventor Brian K. McMillin
Brian K. McMillin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8440473Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.Type: GrantFiled: June 6, 2011Date of Patent: May 14, 2013Assignee: Lam Research CorporationInventors: Qing Xu, Camelia Rusu, Brian K. McMillin, Alexander M. Paterson
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Publication number: 20120309198Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.Type: ApplicationFiled: June 6, 2011Publication date: December 6, 2012Applicant: LAM RESEARCH CORPORATIONInventors: Qing Xu, Camelia Rusu, Brian K. McMillin, Alexander M. Paterson
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Patent number: 7653394Abstract: The invention is a system operating on a reference frequency. The system comprises a plurality of at least three nodes. Each node hands off a message received from another node to a subsequent node. Each of the nodes comprises a transceiver receiving a message on the reference frequency from another node and transmitting the received message on the reference frequency to a subsequent node, and a controller controlling operation of the transceiver to receive the message transmitted by another node and to transmit the received message to a subsequent node.Type: GrantFiled: June 3, 2005Date of Patent: January 26, 2010Assignee: AFX Technology Group International, Inc.Inventor: Brian K. McMillin
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Patent number: 7053994Abstract: Broadly speaking, an invention is provided for monitoring a plasma optical emission. More specifically, the present invention provides a method for monitoring the plasma optical emission through a variable aperture to detect an endpoint of a plasma etching process without interferences that could lead to false endpoint calls. The method includes collecting optical emission data from a plasma through an aperture defined by moveable members. The moveable members are capable of varying a configuration of the aperture. The method also includes holding the moveable members at a particular time to cause the aperture to maintain a fixed configuration. The method further includes detecting a specific perturbation in the plasma optical emission while holding the moveable members.Type: GrantFiled: October 28, 2003Date of Patent: May 30, 2006Assignee: Lam Research CorporationInventors: Brian K. McMillin, Francois Chandrasekar Dassapa
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Patent number: 7027773Abstract: The invention is a system operating on a reference frequency. The system comprises a plurality of at least three nodes. Each node hands off a message received from another node to a subsequent node. Each of the nodes comprises a transceiver receiving a message on the reference frequency from another node and transmitting the received message on the reference frequency to a subsequent node, and a controller controlling operation of the transceiver to receive the.. message transmitted by another node and to transmit the received message to a subsequent node.Type: GrantFiled: May 24, 2000Date of Patent: April 11, 2006Assignee: AFX Technology Group International, Inc.Inventor: Brian K. McMillin
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Patent number: 6908846Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.Type: GrantFiled: March 27, 2003Date of Patent: June 21, 2005Assignee: Lam Research CorporationInventors: Brian K. McMillin, Eric Hudson, Jeffrey Marks
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Publication number: 20040149223Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: ApplicationFiled: December 18, 2003Publication date: August 5, 2004Applicant: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Publication number: 20040144493Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.Type: ApplicationFiled: January 14, 2004Publication date: July 29, 2004Applicant: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Brian K. McMillin
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Publication number: 20040080050Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.Type: ApplicationFiled: March 27, 2003Publication date: April 29, 2004Applicant: Lam Research CorporationInventors: Brian K, McMillin, Eric Hudson, Jeffrey Marks
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Patent number: 6709547Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.Type: GrantFiled: June 30, 1999Date of Patent: March 23, 2004Assignee: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Brian K. McMillin
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Patent number: 6692649Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: GrantFiled: January 18, 2001Date of Patent: February 17, 2004Assignee: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Patent number: 6508913Abstract: A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.Type: GrantFiled: October 25, 2001Date of Patent: January 21, 2003Assignee: Lam Research CorporationInventors: Brian K. McMillin, Robert Knop
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Publication number: 20020042205Abstract: A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.Type: ApplicationFiled: October 25, 2001Publication date: April 11, 2002Inventors: Brian K. McMillin, Robert Knop
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Patent number: 6333272Abstract: A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.Type: GrantFiled: October 6, 2000Date of Patent: December 25, 2001Assignee: Lam Research CorporationInventors: Brian K. McMillin, Robert Knop
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Publication number: 20010023741Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: ApplicationFiled: January 18, 2001Publication date: September 27, 2001Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Patent number: 6203657Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.Type: GrantFiled: March 31, 1998Date of Patent: March 20, 2001Assignee: Lam Research CorporationInventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
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Patent number: 6142163Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber in wafer processing equipment. The disclosed apparatus and method uses a ballast port for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve which is located between the reaction chamber and turbo pump. The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delay for a pre-specified period.Type: GrantFiled: March 31, 1998Date of Patent: November 7, 2000Assignee: LAM Research CorporationInventors: Brian K. McMillin, Farro F. Kaveh, Michael S. Barnes