Abstract: A switched amplifying device for use in a wireless telecommunications receiver as an amplifier of an RF signal has an amplifying device electrically connected in parallel with a switch. The switched amplifying device has a bypass mode in which an electrical path of the RF signal bypasses the amplifying device and is connected to an RF output port. The switched amplifying device also has an amplification mode in which the electrical path of the RF signal flows through the amplifying device prior to presentation of the RF signal at the RF output. In the bypass mode, the amplification device is in an off state. Similarly, in the amplification mode, the bypass device is in an off state. Use of the switched amplifying device according to the teachings of the present invention in a receiver permits accommodation of a larger dynamic range in amplitude of received signal with less signal degradation and noise figure than in prior art amplification devices.

Abstract: A switched amplifying device for use in a wireless telecommunications receiver as an amplifier of an RF signal has an amplifying device electrically connected in parallel with a switch. The switched amplifying device has a bypass mode in which an electrical path of the RF signal bypasses the amplifying device and is connected to an RF output port. The switched amplifying device also has a amplification mode in which, the electrical path of the RF signal flows through the amplifying device prior to presentation of the RF signal at the RF output. In the bypass mode, the amplification device is in an off state. Similarly, in the amplification mode, the bypass device is in an off state. Use of the switched amplifying device according to the teachings of the present invention in a receiver permits accommodation of a larger dynamic range in amplitude of received signal with less signal degradation and noise figure than in prior art amplification devices.

Abstract: A digital attenuator circuit for attenuating RF frequencies implemented as an MMIC having series microstrip transmission lines between an RF input terminal and an RF output terminal and having at least one shunt path comprised of a series combination of a MESFET able to be switched between a conducting state and a nonconducting state and a thin-film resistor, wherein the circuit employs a distributed topology whereby when the MESFET is in the conducting state the impedance of the microstrip transmission lines matches the impedance of the shunt elements thereby enabling the circuit to operate over a wide bandwidth.