Patents by Inventor Brian Lue
Brian Lue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060286300Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.Type: ApplicationFiled: July 19, 2006Publication date: December 21, 2006Inventors: Tetsuya Ishikawa, Rick Roberts, Helen Armer, Leon Volfovski, Jay Pinson, Michael Rice, David Quach, Mohsen Salek, Robert Lowrance, William Weaver, Charles Carlson, Chongyang Wang, Jeffrey Hudgens, Harald Herchen, Brian Lue, John Backer
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Publication number: 20060278165Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.Type: ApplicationFiled: July 19, 2006Publication date: December 14, 2006Inventors: Tetsuya Ishikawa, Rick Roberts, Helen Armer, Leon Volfovski, Jay Pinson, Michael Rice, David Quach, Mohsen Salek, Robert Lowrance, John Backer, William Weaver, Charles Carlson, Chongyang Wang, Jeffrey Hudgens, Harald Herchen, Brian Lue
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Publication number: 20060238954Abstract: A chuck for a semiconductor workpiece features integrated resistive heating and electrostatic bipolar chucking elements on a thermal pedestal. These integrated heating and chucking elements maintain wafer flatness, as well as uniformity of an underlying gap accommodating a thermal gas between the workpiece and the chuck. In accordance with one embodiment of the present invention, a laminated Kapton wafer heater is attached to the top of the thermal surface, under the wafer: At least two electrical voltage zones are isolated within the heater, in order to create a chucking force between the chuck and the wafer without having to contact the wafer with an electrical conductor. These voltage zones can be created by using separate conducting elements as well as by imposing a DC bias on zones including the resistive heating elements.Type: ApplicationFiled: June 15, 2005Publication date: October 26, 2006Applicant: Applied Materials, Inc., A Delaware corporationInventors: Tetsuya Ishikawa, Brian Lue
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Publication number: 20060134330Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.Type: ApplicationFiled: April 22, 2005Publication date: June 22, 2006Inventors: Tetsuya Ishikawa, Rick Roberts, Helen Armer, Leon Volfovski, Jay Pinson, Michael Rice, David Quach, Mohsen Salek, Robert Lowrance, William Weaver, Charles Carlson, Chongyang Wang, Jeffrey Hudgens, Harald Herchen, Brian Lue, John Backer
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Publication number: 20060130750Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool.Type: ApplicationFiled: April 22, 2005Publication date: June 22, 2006Inventors: Tetsuya Ishikawa, Rick Roberts, Helen Armer, Leon Volfovski, Jay Pinson, Mike Rice, David Quach, Mohsen Salek, Robert Lowrance, John Backer, William Weaver, Charles Carlson, Chongyang Wang, Jeffrey Hudgens, Harald Herchen, Brian Lue
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Publication number: 20060078709Abstract: A method for modifying the surface of an electrochemical plating component by treatment with ultraviolet light and/or ozone to improve the wettability of the surface. A method for controlling the wettability of the surface of an electrochemical plating component by rapidly cooling a melted polymer employed to form the surface. The electrochemical plating components produced from these methods of modifying and/or controlling surface wettability.Type: ApplicationFiled: October 7, 2004Publication date: April 13, 2006Inventor: Brian Lue
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Publication number: 20040190215Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.Type: ApplicationFiled: January 28, 2004Publication date: September 30, 2004Applicant: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6721162Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.Type: GrantFiled: March 12, 2002Date of Patent: April 13, 2004Assignee: Applied Materials Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6667527Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.Type: GrantFiled: May 10, 2002Date of Patent: December 23, 2003Assignee: Applied Materials, IncInventors: Brian Lue, Tetsuya Ishikawa, Liang-Guo Wang
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Publication number: 20030209773Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.Type: ApplicationFiled: May 10, 2002Publication date: November 13, 2003Applicant: Applied Materials, Inc.Inventors: Brian Lue, Tatsuya Ishikawa, Liang-Guo Wang
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Publication number: 20020135969Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.Type: ApplicationFiled: March 12, 2002Publication date: September 26, 2002Applicant: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6414834Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.Type: GrantFiled: June 16, 2000Date of Patent: July 2, 2002Assignee: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6264467Abstract: A novel apparatus and method of making the apparatus for supporting a substrate during processing. A base defining grooves at a substrate support location is described. Grooves are provided to catch wear particles from the substrate caused by friction during relative movement between the substrate and the support. A plurality of substrate support locations can be provided on the base surface. The base surface preferably comprises an annulus with substrate support locations spaced circumferentially around the annulus. Protrusions may be provided at substrate support locations. The protrusions define contact surfaces on which grooves can be formed.Type: GrantFiled: April 14, 1999Date of Patent: July 24, 2001Assignee: Applied Materials, Inc.Inventors: Brian Lue, Andreas G. Hegedus, Dean Jennings, Candy Ching-Fai Siu
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Patent number: 6175485Abstract: The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.Type: GrantFiled: July 19, 1996Date of Patent: January 16, 2001Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Brian Lue, Ramkishan Rao Lingampalli, Shun Jackson Wu
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Patent number: 6170428Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1.Type: GrantFiled: July 15, 1996Date of Patent: January 9, 2001Assignee: Applied Materials, Inc.Inventors: Fred C. Redeker, Farhad Moghadam, Hiroji Hanawa, Tetsuya Ishikawa, Dan Maydan, Shijian Li, Brian Lue, Robert J. Steger, Manus Wong, Yaxin Wong, Ashok K. Sinha
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Patent number: 6108189Abstract: An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.Type: GrantFiled: November 6, 1997Date of Patent: August 22, 2000Assignee: Applied Materials, Inc.Inventors: Edwin C. Weldon, Kenneth S. Collins, Arik Donde, Brian Lue, Dan Maydan, Robert J. Steger, Timothy Dyer, Ananda H. Kumar, Alexander M. Veytser, Kadthala R. Narendrnath, Semyon L. Kats, Arnold Kholodenko, Shamouil Shamouilian, Dennis S. Grimard
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Patent number: 6077357Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.Type: GrantFiled: May 29, 1997Date of Patent: June 20, 2000Assignee: Applied Materials, Inc.Inventors: Kent Rossman, Shijian Li, Brian Lue
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Patent number: 5904776Abstract: The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.Type: GrantFiled: September 8, 1997Date of Patent: May 18, 1999Assignee: Applied Materials, Inc.Inventors: Arik Donde, Dan Maydan, Robert J. Steger, Edwin C. Weldon, Brian Lue, Timothy Dyer
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Patent number: 5876119Abstract: A method and apparatus for noncontact temperature measurement of a substrate insitu by measuring the temperature of a substrate support member and an intermediate member located between the substrate and the substrate support member. The intermediate member has a given heat transfer surface area adjacent both the substrate and the substrate support member and high thermal conductivity so that the intermediate member rapidly approaches a steady state surface temperature after the substrate is positioned in the substrate support member. In this arrangement, the temperature of the substrate can be determined either by calibration or application of a heat transfer equation. Various temperature measuring instruments may be used, including a light probe located in the substrate support member normal to the surface of the intermediate member to measure the radiation from a temperature sensitive material deposited on the bottom surface of the intermediate member.Type: GrantFiled: December 19, 1995Date of Patent: March 2, 1999Assignee: Applied Materials, Inc.Inventors: Tetsuya Ishikawa, Brian Lue
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Patent number: 5761023Abstract: An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.Type: GrantFiled: April 25, 1996Date of Patent: June 2, 1998Assignee: Applied Materials, Inc.Inventors: Brian Lue, Tetsuya Ishikawa, Fred C. Redeker, Manus Wong, Shijian Li