Patents by Inventor Brian W. Herbst

Brian W. Herbst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method for reducing thermo-mechanical stress in stacked vias
    Patent number: 6831363
    Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: December 14, 2004
    Assignee: International Business Machines Corporation
    Inventors: Timothy J. Dalton, Sanjit K. Das, Brett H. Engel, Brian W. Herbst, Habib Hichri, Bernd E. Kastenmeier, Kelly Malone, Jeffrey R. Marino, Arthur Martin, Vincent J. McGahay, Ian D. Melville, Chandrasekhar Narayan, Kevin S. Petrarca, Richard P. Volant
  • Structure and method for reducing thermo-mechanical stress in stacked vias
    Publication number: 20040113278
    Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.
    Type: Application
    Filed: December 12, 2002
    Publication date: June 17, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Timothy J. Dalton, Sanjit K. Das, Brett H. Engel, Brian W. Herbst, Habib Hichri, Bernd E. Kastenmeier, Kelly Malone, Jeffrey R. Marino, Arthur Martin, Vincent J. McGahay, Ian D. Melville, Chandrasekhar Narayan, Kevin S. Petrarca, Richard P. Volant
  • Antireflective coating for microlithography
    Patent number: 5607824
    Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.
    Type: Grant
    Filed: July 27, 1994
    Date of Patent: March 4, 1997
    Assignee: International Business Machines Corporation
    Inventors: James T. Fahey, Brian W. Herbst, Leo L. Linehan, Wayne M. Moreau, Gary T. Spinillo, Kevin M. Welsh, Robert L. Wood