Abstract: Described is an article having a substrate; a thermochemically stable, amorphous layer comprising tantalum or a tantalum-containing material; a layer of material having a rock salt-like structure having substantial alignment both in-plane and out-of-plane; a superconducting layer formed on said rock salt-like layer having substantial in-plane and out-of-plane alignment; wherein said rock salt-like layer provides a template for the epitaxial growth of said superconducting layer; and an optional buffer layer or layers having substantial alignment both in-plane and out-of-plane, between the rock salt-like structure layer and the superconducting layer.

Abstract: Described is an article having a substrate; a thermochemically stable, amorphous layer comprising tantalum or a tantalum-containing material; a layer of material having a rock salt-like structure having substantial alignment both in-plane and out-of-plane; a superconducting layer formed on said rock salt-like layer having substantial in-plane and out-of-plane alignment; wherein said rock salt-like layer provides a template for the epitaxial growth of said superconducting layer; and an optional buffer layer or layers having substantial alignment both in-plane and out-of-plane, between the rock salt-like structure layer and the superconducting layer.

Abstract: A semiconductor structure for, and method of manufacture of, a linear integrated circuit provides the equivalent of a base function in a transistor, wherein the base function has a dual charge density, with the latter being relatively low in the lower active area of the base between PN junctions for high gain and high breakdown voltage, but high along the upper surface to prevent an unwanted inversion layer from occurring.