Abstract: Boron-containing network sulfide glass which may be useful in IR transmitting applications, such as IR optics, laser or fiber amplifiers doped with rare earths with emission in the near IR, and methods of making the same.

Abstract: Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?535° C., for example, ?570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.

Abstract: Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.

Abstract: A non-stoichiometric glass composition having greater than or equal to about 50 mol. % to less than or equal to about 95 mol. % GeX2; greater than or equal to about 0.5 mol. % to less than or equal to about 35 mol. % Ga2X3, In2X3, or a combination thereof; and greater than or equal to about 0.5 mol. % to less than or equal to about 40 mol. % RX. R can be an alkaline earth metal. X can be present in a non-stoichiometric amount and can be selected from Se, Te, S, and combinations thereof. A method for making a non-stoichiometric glass including forming a GaGeX precursor material, grinding the precursor material, loading the ground pre-cursor material with an alkaline earth metal component, and forming an alkaline earth metal GaGeX glass.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses.

Abstract: CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses.

Abstract: Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

Abstract: A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a low glass transition temperature) is used to form a barrier layer on the device. The LLT material can be, for example, tin fluorophosphate glass, chalcogenide glass, tellurite glass and borate glass. The LLT material can be deposited onto the device by, for example, sputtering, evaporation, laser-ablation, spraying, pouring, frit-deposition, vapor-deposition, dip-coating, painting or rolling, spin-coating or any combination thereof. Defects in the LLT material from the deposition step can be removed by a consolidation step (heat treatment), to produce a pore-free, gas and moisture impenetrable protective coating on the device. Although many of the deposition methods are possible with common glasses (i.e.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

Abstract: A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points?600° C., thermal expansion coefficient of from 35 to 50×10?7/° C.

Abstract: A lithium-ion conductive glass-ceramic article has a crystalline component characterized by the formula MA2(XO4)3, where M represents one or more monovalent or divalent cations selected from Li, Na and Zn, A represents one or more trivalent, tetravalent or pentavalent cations selected from Al, Cr, Fe, Ga, Si, Ti, Ge, V and Nb, and X represents P cations which may be partially substituted by B cations.

Abstract: Boron-containing network sulfide glass which may be useful in IR transmitting applications, such as IR optics, laser or fiber amplifiers doped with rare earths with emission in the near IR, and methods of making the same.

Abstract: Fusion-formable sodium-containing aluminosilicate and boroaluminosilicate glasses are described. The glasses are particularly useful for controlled release of sodium—useful in semiconductor applications, such as thin film photovoltaics where the sodium required to optimize cell efficiency is to be derived from the substrate glass.

Abstract: Photovoltaic devices where glass substrates have a composition where (RO+M2O)/Z2O3 is greater than 1. This ratio may affect sodium out-flux from the glass substrate and into the CIGS layer or the Mo layer or both.

Abstract: A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a low glass transition temperature) is used to form a barrier layer on the device. The LLT material can be, for example, tin fluorophosphate glass, chalcogenide glass, tellurite glass and borate glass. The LLT material can be deposited onto the device by, for example, sputtering, evaporation, laser-ablation, spraying, pouring, frit-deposition, vapor-deposition, dip-coating, painting or rolling, spin-coating or any combination thereof. Defects in the LLT material from the deposition step can be removed by a consolidation step (heat treatment), to produce a pore-free, gas and moisture impenetrable protective coating on the device. Although many of the deposition methods are possible with common glasses (i.e.

Abstract: A silicon wafer-based photovoltaic module is described, which includes a first outer protective layer and a second outer protective layer, wherein both outer protective layers comprise a low- or no-sodium glass or low- or no-alkali compositions. The photovoltaic modules show resistance to water ingress, no or reduced potential-induced sodium ion drift, and reduced potential induced degradation.