Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Implementations of methods of forming capacitors may include depositing a first metal layer over a substrate, forming a photoresist layer over the first metal layer, patterning the photoresist layer, patterning the first metal layer using the pattern of the photoresist layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the dielectric layer to form a metal-insulator-metal capacitor.

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Implementations of methods of forming capacitors may include depositing a first metal layer over a substrate, forming a photoresist layer over the first metal layer, patterning the photoresist layer, patterning the first metal layer using the pattern of the photoresist layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the dielectric layer to form a metal-insulator-metal capacitor.

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.