Abstract: A method is provided for stabilizing Czochralski (CZ) silicon melt by controlled oscillation of the crucible rotation during the stabilization period of the silicon melt to reduce the gas bubbles and unmelted polysilicon particles contained therein and thereby increase the yield and productivity of CZ silicon crystal production. The crucible rotation is controlled to follow an Oscillating Crucible Rotation (OCR) pattern or a saw tooth rotation pattern, which include rapid oscillations between a high rate of rotation and a low rate of rotation of the crucible during a period prior to the growth of the CZ crystal ingot.

Abstract: An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.