Patents by Inventor Bruce Odekirk

Bruce Odekirk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6388272
    Abstract: Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy through a dielectric layer.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: May 14, 2002
    Assignee: Caldus Semiconductor, Inc.
    Inventor: Bruce Odekirk
  • Publication number: 20020024050
    Abstract: Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy through a dielectric layer.
    Type: Application
    Filed: July 25, 2001
    Publication date: February 28, 2002
    Applicant: Caldus Semiconductor, Inc.
    Inventor: Bruce Odekirk
  • Patent number: 5143857
    Abstract: A method of fabricating an integrated circuit comprises providing a heavily compensated substrate having a source region, a drain region and a third region, each of a first conductivity type, and introducing dopant of a second conductivity type into the substrate to surround the third region.
    Type: Grant
    Filed: July 30, 1990
    Date of Patent: September 1, 1992
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Eric P. Finchem, William A. Vetanen, Bruce Odekirk, Irene G. Beers